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Phase stability of silicon during indentation at elevated temperature: evidence for a direct transformation from metallic Si-II to diamond cubic Si-I

Published online by Cambridge University Press:  21 November 2011

S.K. Bhuyan ,
J.E. Bradby ,
S. Ruffell ,
B. Haberl ,
C. Saint ,
J.S. Williams  and
P. Munroe
S.K. Bhuyan
Affiliation:
Department of Electronic Materials Engineering, Research School of Physics and Engineering, Australian National University, Canberra, ACT 0200, Australia
J.E. Bradby*
Affiliation:
Department of Electronic Materials Engineering, Research School of Physics and Engineering, Australian National University, Canberra, ACT 0200, Australia
S. Ruffell
Affiliation:
Department of Electronic Materials Engineering, Research School of Physics and Engineering, Australian National University, Canberra, ACT 0200, Australia
B. Haberl
Affiliation:
Department of Electronic Materials Engineering, Research School of Physics and Engineering, Australian National University, Canberra, ACT 0200, Australia
C. Saint
Affiliation:
Department of Electronic Materials Engineering, Research School of Physics and Engineering, Australian National University, Canberra, ACT 0200, Australia
J.S. Williams
Affiliation:
Department of Electronic Materials Engineering, Research School of Physics and Engineering, Australian National University, Canberra, ACT 0200, Australia
P. Munroe
Affiliation:
Electron Microscope Unit, University of New South Wales, Sydney, NSW 2052, Australia
*
Address all correspondence to J.E. Bradby atjodie.bradby@anu.edu.au
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Abstract

Nanoindentation-induced phase transformations in both crystalline silicon (c-Si) (100) and ion-implanted amorphous silicon have been studied at temperatures up to 200 °C. The region under the indenter undergoes rapid volume expansion at temperatures above 125 °C during unloading, which is indicated by “bowing” behavior in the load–displacement curve. Polycrystalline Si-I is the predominant end phase for indentation in crystalline silicon whereas high-pressure Si-III/Si-XII phases are the result of indentation in amorphous silicon. We suggest that the Si-II phase is unstable in a c-Si matrix at elevated temperatures and can directly transform to Si-I during the early stages of unloading.

Type
Rapid Communications
Information
MRS Communications , Volume 2 , Issue 1 , March 2012 , pp. 9 - 12
Copyright
Copyright © Materials Research Society 2011

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References

1.Minomura, S. and Drickamer, H.G.: Pressure induced phase transitions in silicon, germanium and some III–V compounds. J. Phys. Chem. Solids 23, 451 (1962).CrossRefGoogle Scholar
2.Domnich, V. and Gogotsi, Y.: Phase transformations in silicon under contact loading. Rev. Adv. Mater. Sci. 3, 1 (2002).Google Scholar
3.Domnich, V., Gogotsi, Y., and Dub, S.: Effect of phase transformations on the shape of the unloading curve in the nanoindentation of silicon. Appl. Phys. Lett. 76, 2214 (2000).CrossRefGoogle Scholar
4.Haberl, B., Bradby, J.E., Ruffell, S., Williams, J.S., and Munroe, P.: Phase transformations induced by spherical indentation in ion-implanted amorphous silicon. J. Appl. Phys. 100, 013520 (2006).CrossRefGoogle Scholar
5.Suzuki, T. and Ohmura, T.: Ultra-microindentation of silicon at elevated temperatures. Philos. Mag. A 74, 1073 (1996).CrossRefGoogle Scholar
6.Ge, D., Domnich, V. and Gogotsi, Y.: Thermal stability of metastable silicon phases produced by nanoindentation. J. Appl. Phys. 95, 2725 (2004).CrossRefGoogle Scholar
7.Domnich, V., Aratyn, Y., Kriven, W.M., and Gogotsi, Y.: Temperature dependence of silicon hardness: experimental evidence of phase transformations. Rev. Adv. Mater. Sci. 17, 33 (2008).Google Scholar
8.Lund, A.C., Hodge, A.M., and Schuh, C.A.: Incipient plasticity during nanoindentation at elevated temperatures. Appl. Phys. Lett. 85, 1362 (2004).CrossRefGoogle Scholar
9.Singh, R.K., Munroe, P., and Hoffman, M.: Effect of temperature on metastable phases induced in silicon during nanoindentation. J. Mater. Res. 23, 245 (2008).CrossRefGoogle Scholar
10.Ruffell, S., Bradby, J.E., Williams, J.S., Munoz-Paniagua, D., Tadayyon, S., Coatsworth, L.L., and Norton, P.R.: Nanoindentation-induced phase transformations in silicon at elevated temperatures. Nanotechnology 20, 135603 (2009).CrossRefGoogle ScholarPubMed
11.Trenkle, J.C., Packard, C.E., and Schuh, C.A.: Hot nanoindentation in inert environments. Rev. Sci. Instrum. 81, 13 (2010).CrossRefGoogle ScholarPubMed
12.Saka, H.: Transmission electron microscopy observation of thin foil specimens prepared by means of a focused ion beam. J. Vac. Sci. Technol. B 16, 2522 (1998).Google Scholar
13.Ruffell, S., Haberl, B., Koenig, S., Bradby, J.E., and Williams, J.S.: Annealing of nanoindentation-induced high pressure crystalline phases created in crystalline and amorphous silicon. J. Appl. Phys. 105, 093513 (2009).CrossRefGoogle Scholar
14.Bradby, J.E., Williams, J.S., Wong-Leung, J., Swain, M.V., and Munroe, P.: Mechanical deformation in silicon by micro-indentation. J. Mater. Res. 16, 1500 (2001).CrossRefGoogle Scholar