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In-situ transmission electron microscopy studies of the crystallization of N-doped Ge-rich GeSbTe materials

Published online by Cambridge University Press:  22 August 2018

Marta Agati
Affiliation:
CEMES-CNRS, 29 Rue Jeanne Marvig, 31055 Toulouse, France
François Renaud
Affiliation:
CEMES-CNRS, 29 Rue Jeanne Marvig, 31055 Toulouse, France
Daniel Benoit
Affiliation:
STMicroelectronic, 850 Rue Jean Monnet, 38920 Crolles, France
Alain Claverie*
Affiliation:
CEMES-CNRS, 29 Rue Jeanne Marvig, 31055 Toulouse, France
*
Address all correspondence to Alain Claverie at alain.claverie@cemes.fr
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Abstract

We have studied by electron microscopy and x-ray diffraction techniques the amorphous-to-crystalline phase transition which occurs during annealing of a highly Ge-rich and N-doped amorphous GeSbTe material. The crystallization onset occurs at 380 °C with the diffusion and segregation of Ge followed by the formation of Ge nanocrystals. The GeSbTe face-centered cubic (FCC) crystalline phase only appears at 400 °C. Phase separation occurs because the Ge concentration is well above what can be accommodated by the Ge2Sb2Te5 lattice. The possible formation of a two-phase material should be considered in order to simulate device characteristics and optimize material composition for electronic memory applications.

Type
Research Letters
Copyright
Copyright © Materials Research Society 2018 

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