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Tungsten disulfide thin film/p-type Si heterojunction photocathode for efficient photochemical hydrogen production

Published online by Cambridge University Press:  06 June 2017

Ki Chang Kwon
Affiliation:
Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul 08826, Republic of Korea School of Chemical Engineering and Materials Science, Chung-Ang University, Seoul 06974, Republic of Korea
Seokhoon Choi
Affiliation:
Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul 08826, Republic of Korea
Kootak Hong
Affiliation:
Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul 08826, Republic of Korea
Dinsefa Mensur Andoshe
Affiliation:
Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul 08826, Republic of Korea
Jun Min Suh
Affiliation:
Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul 08826, Republic of Korea
Changyeon Kim
Affiliation:
Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul 08826, Republic of Korea
Kyoung Soon Choi
Affiliation:
Advanced Nano Surface Research Group, Korea Basic Science Institute, Daejeon 34133, Republic of Korea
Jeong Hyeon Oh
Affiliation:
School of Chemical Engineering and Materials Science, Chung-Ang University, Seoul 06974, Republic of Korea
Soo Young Kim*
Affiliation:
School of Chemical Engineering and Materials Science, Chung-Ang University, Seoul 06974, Republic of Korea
Ho Won Jang*
Affiliation:
Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul 08826, Republic of Korea
*
Address all correspondence to Soo Young Kim, Ho Won Jang at sooyoungkim@cau.ac.kr, hwjang@snu.ac.kr
Address all correspondence to Soo Young Kim, Ho Won Jang at sooyoungkim@cau.ac.kr, hwjang@snu.ac.kr
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Abstract

We demonstrate the tungsten disulfide (WS2) thin film catalysts prepared by the sulfurization of vacuum deposited WO3 thin films for efficient hydrogen production with over 90% Faradaic efficiency. The 23-nm-thick WS2 thin film catalyst heterojunction with p-type silicon photocathode could exhibit a photocurrent density of 8.3 mA/cm2 at 0 V versus a reversible hydrogen electrode (RHE), a low onset potential of 0.2 V versus RHE when photocurrent density reaches −1 mA/cm2 and long-term stability over 10 h. The enhanced catalytic activities of WS2/p-Si photocathodes compared with the bare p-Si photocathode originate from a number of edge sites in the synthesized polycrystalline thin films, which could act as hydrogen evolution catalyst.

Type
Research Letters
Copyright
Copyright © Materials Research Society 2017 

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Footnotes

These authors contributed equally to this work.

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