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Carrier-induced nonlinearities in InGaN/GaN quantum wells with V-pits

Published online by Cambridge University Press:  15 June 2012

Meg Mahat ,
Antonio Llopis ,
Richard D. Schaller ,
Ian Watson ,
Sergio Periera  and
Arup Neogi
Meg Mahat
Affiliation:
Department of Physics, University of North Texas, Denton, Texas 76203
Antonio Llopis
Affiliation:
Department of Physics, University of North Texas, Denton, Texas 76203
Richard D. Schaller
Affiliation:
Argonne National Laboratory, Center for Nanoscale Materials, Argonne, Illinois 60439
Ian Watson
Affiliation:
SUPA, Institute of Photonics, University of Strathclyde, Glasgow, UK
Sergio Periera
Affiliation:
CICECO, Universidade de Aveiro, 3810-193 Aveiro, Portugal
Arup Neogi*
Affiliation:
Department of Physics, University of North Texas, Denton, Texas 76203
*
Address all correspondence to A. Neogi at arup@unt.edu
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Abstract

Ultrafast differential transmission spectroscopy was employed to study the carrier dynamics in InGaN/GaN multiple quantum wells with high inverted hexagonal pits density due to threading dislocation. By monitoring the temporal evolution of the excitonic absorption spectrum, a reduction of the quantum-confinement Stark shift was observed due to the photo-induced in-well field screening at low carrier densities and excitonic absorption quenching at high carrier densities. By comparing the differential absorption spectra at various injected carrier densities, the in-well field screening effect was distinguished from excitonic bleaching.

Type
Research Letters
Information
MRS Communications , Volume 2 , Issue 2 , June 2012 , pp. 55 - 60
Copyright
Copyright © Materials Research Society 2012

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