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Boron doping of ultrananocrystalline diamond films by thermal diffusion process

Published online by Cambridge University Press:  13 August 2018

Pablo Tirado ,
Jesus J. Alcantar-Peña ,
Elida de Obaldia ,
Yuriy Kudriavtsev ,
Rafael García  and
Orlando Auciello
Pablo Tirado
Affiliation:
Departamento de Investigación en Física, Universidad de Sonora, Rosales y Luis Encinas, Hermosillo, Sonora 83000, México Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX 75080, USA
Jesus J. Alcantar-Peña
Affiliation:
Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX 75080, USA
Elida de Obaldia
Affiliation:
Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX 75080, USA Facultad de Ciencia y Tecnología, Universidad Tecnológica de Panamá, Panamá, República de Panamá
Yuriy Kudriavtsev
Affiliation:
Departamento de Ingeniería Eléctrica, CINVESTAV-IPN, Ciudad de México, México
Rafael García
Affiliation:
Departamento de Investigación en Física, Universidad de Sonora, Rosales y Luis Encinas, Hermosillo, Sonora 83000, México
Orlando Auciello*
Affiliation:
Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX 75080, USA Department of Bioengineering, University of Texas at Dallas, Richardson, TX 75080, USA
*
Address all correspondence to Orlando Auciello at orlando.auciello@utdallas.edu
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Abstract

A novel process for Boron doping of ultrananocrystalline diamond (UNCD) films, using thermal diffusion, is described. Hall measurements show an increase in carrier concentration from 1013 to 1020 cm−3. Ultraviolet Photoelectron Spectroscopy and x-ray Photoelectron Spectroscopy show a band gap of 4.4 eV, a work function of 5.1 eV and a Fermi level at 2.0 eV above the valence band. Boron atoms distribution through UNCD films, was measured by Secondary Ion Mass Spectrometry, revealing Boron atoms diffusivity of about 10−14 cm2/s. Raman spectroscopy and x-ray Diffraction analysis revealed that UNCD films did not suffer graphitization nor structural damage during annealing.

Type
Research Letters
Information
MRS Communications , Volume 8 , Issue 3 , September 2018 , pp. 1111 - 1118
Copyright
Copyright © Materials Research Society 2018 

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