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Silicon Surface Morphologies after Femtosecond Laser Irradiation

Published online by Cambridge University Press:  31 January 2011

Brian R. Tull ,
James E. Carey ,
Eric Mazur ,
Joel P. McDonald  and
Steven M. Yalisove
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Abstract

In this article, we present summaries of the evolution of surface morphology resulting from the irradiation of single-crystal silicon with femtosecond laser pulses. In the first section, we discuss the development of micrometer-sized cones on a silicon surface irradiated with hundreds of femtosecond laser pulses in the presence of sulfur hexafluoride and other gases. We propose a general formation mechanism for the surface spikes. In the second section, we discuss the formation of blisters or bubbles at the interface between a thermal silicon oxide and a silicon surface after irradiation with one or more femtosecond laser pulses. We discuss the physical mechanism for blister formation and its potential use as channels in microfluidic devices.

Keywords

laser ablationmorphologyoxideSi
Type
Research Article
Information
MRS Bulletin , Volume 31 , Issue 8: Ultrafast Lasers in Materials Research , August 2006 , pp. 626 - 633
Copyright
Copyright © Materials Research Society 2006

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References

1Liu, P.L.Yen, R.Bloembergen, N. and Hodgson, R.T.Appl. Phys. Lett. 34 (1979) p. 864.CrossRefGoogle Scholar
2Liu, J.M.Yen, R.Donovan, E.P.Bloembergen, N. and Hodgson, R.T.Appl. Phys. Lett. 38 (1981) p. 617.CrossRefGoogle Scholar
3Liu, J.M.Yen, R.Kurz, H. and Bloembergen, N.Appl. Phys. Lett. 39 (1981) p. 755.CrossRefGoogle Scholar
4Sheng, D.Y.Walser, R.M.Becker, M.F. and Ambrose, J.G.Appl. Phys. Lett. 39 (1981) p. 99.CrossRefGoogle Scholar
5Merkle, K.L.Baumgart, H.Uebbing, R.H. and Phillipp, F.Appl. Phys. Lett. 40 (1982) p. 729.CrossRefGoogle Scholar
6Nissim, Y.I.Sapriel, J. and Oudar, J.L.Appl. Phys. Lett. 42 (1983) p. 504.CrossRefGoogle Scholar
7Kanemitsu, Y.Nakada, I. and Kuroda, H.Appl. Phys. Lett. 47 (1985) p. 939.CrossRefGoogle Scholar
8Wang, W.K. and Spaepen, F.J. Appl. Phys. 58 (1985) p. 4477.CrossRefGoogle Scholar
9Liu, J.M.Kurz, H. and Bloembergen, N.Appl. Phys. Lett. 41 (1982) p. 643.CrossRefGoogle Scholar
10Linde, D. von der and Fabricius, N.Appl. Phys. Lett. 41 (1982) p. 991.CrossRefGoogle Scholar
11Lompre, L.A.Liu, J.M.Kurz, H. and Bloembergen, N.Appl. Phys. Lett. 43 (1983) p. 168.CrossRefGoogle Scholar
12Bucksbaum, P.H. and Bokor, J.Phys. Rev. Lett. 53 (1984) p. 182.CrossRefGoogle Scholar
13Lompre, L.A.Liu, J.M.Kurz, H. and Bloembergen, N.Appl. Phys. Lett. 44 (1984) p. 3.CrossRefGoogle Scholar
14Vandriel, H.M.Lompre, L.A. and Bloembergen, N.Appl. Phys. Lett. 44 (1984) p. 285.CrossRefGoogle Scholar
15Boyd, I.W.Moss, S.C.Boggess, T.F. and Smirl, A.L.Appl. Phys. Lett. 46 (1985) p. 366.CrossRefGoogle Scholar
16Shank, C.V.Yen, R. and Hirlimann, C.Phys. Rev. Lett. 51 (1983) p. 900.CrossRefGoogle Scholar
17Shank, C.V.Yen, R. and Hirlimann, C.Phys. Rev. Lett. 50 (1983) p. 454.CrossRefGoogle Scholar
18Tom, H.W.K.Aumiller, G.D. and Britocruz, C.H.Phys. Rev. Lett. 60 (1988) p. 1438.CrossRefGoogle Scholar
19Sokolowski-Tinten, K., Bialkowski, J.Cavalleri, A.Linde, D. von der, Oparin, A.Meyer-ter-Vehn, J., and Anisimov, S.I.Phys. Rev. Lett. 81 (1998) p. 224.CrossRefGoogle Scholar
20Cavalleri, A.Sokolowski-Tinten, K., Bialkowski, J.Schreiner, M. and Linde, D. von der, J. Appl. Phys. 85 (1999) p. 3301.CrossRefGoogle Scholar
21Linde, D. von der and Sokolowski-Tinten, K., Appl. Surf. Sci. 154 (2000) p. 1.CrossRefGoogle Scholar
22Stampfli, P. and Bennemann, K.H.Progr. Surf. Sci. 35 (1990) p. 161.CrossRefGoogle Scholar
23Stampfli, P. and Bennemann, K.H.Phys. Rev. B 42 (1990) p. 7163.CrossRefGoogle Scholar
24Stampfli, P. and Bennemann, K.H.Phys. Rev. B 46 (1992) p. 10686.CrossRefGoogle Scholar
25Stampfli, P. and Bennemann, K.H.Phys. Rev. B 49 (1994) p. 7299.CrossRefGoogle Scholar
26Fauchet, P.M. and Siegman, A.E.Appl. Phys. Lett. 40 (1982) p. 824.CrossRefGoogle Scholar
27Sipe, J.E.Young, J.F.Preston, J.S. and Vandriel, H.M.Phys. Rev. B 27 (1983) p. 1141.CrossRefGoogle Scholar
28Young, J.F.Preston, J.S.Vandriel, H.M. and Sipe, J.E.Phys. Rev. B 27 (1983) p. 1155.CrossRefGoogle Scholar
29Young, J.F.Sipe, J.E. and Vandriel, H.M.Phys. Rev. B 30 (1984) p. 2001.CrossRefGoogle Scholar
30Vandriel, H.M.Sipe, J.E. and Young, J.F.J. Lumin. 30 (1985) p. 446.CrossRefGoogle Scholar
31Bonse, J.Baudach, S.Kruger, J.Kautek, W. and Lenzner, M.Appl. Phys. A 74 (2002) p. 19.CrossRefGoogle Scholar
32Hirano, M.Kawamura, K. and Hosono, H.Appl. Surf. Sci. 197 (2002) p. 688.CrossRefGoogle Scholar
33Singh, A.P.Kapoor, A.Tripathi, K.N. and Kumar, G.R.Opt. Laser Technol. 34 (2002) p. 37.CrossRefGoogle Scholar
34Costache, F.Kouteva-Arguirova, S., and Reif, J. in Gettering and Defect Engineering in Semiconductor Technology, edited by Richter, H. and Kittler, M. (Trans-Tech, Zurich, 2004) p. 635.Google Scholar
35Daminelli, G.Kruger, J. and Kautek, W.Thin Solid Films 467 (2004) p. 334.CrossRefGoogle Scholar
36Hee, C.W.Ngoi, B.K.A.Lim, L.E.N.Venkatakrishnan, K. and Liang, W.L.Opt. Laser Technol. 37 (2005) p. 93.CrossRefGoogle Scholar
37Kautek, W.Rudolph, P.Daminelli, G. and Kruger, J.Appl. Phys. A 81 (2005) p. 65.CrossRefGoogle Scholar
38Harzic, R. Le, Schuck, H.Sauer, D.Anhut, T.Riemann, I. and Konig, K.Opt. Express 13 (2005) p. 6651.CrossRefGoogle Scholar
39Matsumura, T.Kazama, A. and Yagi, T.Appl. Phys. A 81 (2005) p. 1393.CrossRefGoogle Scholar
40Tran, D.V.Zheng, H.Y.Lam, Y.C.Murukeshan, V.M.Chai, J.C. and Hardt, D.E.Opt. Lasers Eng. 43 (2005) p. 977.CrossRefGoogle Scholar
41Zabotnov, S.V.Ostapenko, I.A.Golovan, L.A.Timoshenko, V.Y.Kashkarov, P.K. and Shandybina, G.D.Quantum Electron. 35 (2005) p. 943.CrossRefGoogle Scholar
42Her, T.-H.Finlay, R.J.Wu, C.Deliwala, S. and Mazur, E.Appl. Phys. Lett. 73 (1998) p. 1673.CrossRefGoogle Scholar
43Her, T.-H.Finlay, R.J.Wu, C. and Mazur, E.Appl. Phys. A 70 (2000) p. 383.CrossRefGoogle Scholar
44Wu, C.Crouch, C.H.Zhao, L.Carey, J.E.Younkin, R.J.Levinson, J.A.Mazur, E.Farrel, R.M.Gothoskar, P. and Karger, A.Appl. Phys. Lett. 78 (2001) p. 1850.CrossRefGoogle Scholar
45Younkin, R.J.Carey, J.E.Mazur, E.Levinson, J.A. and Friend, C.M.J. Appl. Phys. 93 (2003) p. 2626.CrossRefGoogle Scholar
46Crouch, C.H.Carey, J.E.Shen, M.Mazur, E. and Genin, F.Y.Appl. Phys. A 79 (2004) p. 1635.CrossRefGoogle Scholar
47Crouch, C.H.Carey, J.E.Warrender, J.M.Aziz, M.J.Mazur, E. and Genin, F.Y.Appl. Phys. Lett. 84 (2004) p. 1850.CrossRefGoogle Scholar
48Carey, J.E.Crouch, C.H.Shen, M. and Mazur, E.Opt. Lett. 30 (2005) p. 1773.CrossRefGoogle Scholar
49Wu, C.Crouch, C.H.Zhao, L. and Mazur, E.Appl. Phys. Lett. 81 (2002) p. 1999.CrossRefGoogle Scholar
50Sheehy, M.A. “Femtosecond Laser Microstructuring of Silicon: Dopants and Defects,” PhD dissertation, Harvard University (2004).Google Scholar
51Shen, M.Crouch, C.H.Carey, J.E. and Mazur, E.Appl. Phys. Lett. 85 (2004) p. 5694.CrossRefGoogle Scholar
52Sheehy, M.A.Winston, L.Carey, J.E.Friend, C.M. and Mazur, E.Chem. Mater. 17 (2005) p. 3582.CrossRefGoogle Scholar
53Shen, M.Crouch, C.H.Carey, J.E.Younkin, R.J.Mazur, E.Sheehy, M.A. and Friend, C.M.Appl. Phys. Lett. 82 (2003) p. 1715.CrossRefGoogle Scholar
54Carey, J.E. “Femtosecond Laser Microstructuring of Silicon for Novel Optoelectronic Devices,” PhD dissertation, Harvard University (2004).Google Scholar
55Wu, C. “Femtosecond Laser Gas–Solid Interactions,” PhD dissertation, Harvard University (2000).Google Scholar
56Wagner, R.S. and Ellis, W.C.Appl. Phys. Lett. 4 (1964) p. 89.CrossRefGoogle Scholar
57Sanchez, F.Morenza, J.L.Aguiar, R.Delgado, J.C. and Varela, M.Appl. Phys. Lett. 69 (1996) p. 620.CrossRefGoogle Scholar
58Sanchez, F.Morenza, J.L.Aguiar, R.Delgado, J.C. and Varela, M.Appl. Phys. A 66 (1998) p. 83.Google Scholar
59Pedraza, A.J.Fowlkes, J.D. and Lowndes, D.H.Appl. Phys. Lett. 74 (1999) p. 2322.CrossRefGoogle Scholar
60Rassias, T.M. Ed., The Problem of Plateau: A Tribute to Jesse Douglas and Tibor Rado, 1st ed. (World Scientific, River Edge, NJ, 1992).CrossRefGoogle Scholar
61Emel'yanov, V.I. and Babak, D.V.Appl. Phys. A 74 (2002) p. 797.CrossRefGoogle Scholar
62Amoruso, S.Ausanio, G.Barone, A.C.Bruzzese, E.Gragnaniello, L.Vitiello, M. and Wang, X.J. Phys. B 38 (2005) p. L329.CrossRefGoogle Scholar
63Bonse, J.Brzezinka, K.W. and Meixner, A.J.Appl. Surf. Sci. 221 (2004) p. 215.CrossRefGoogle Scholar
64Borowiec, A.Mackenzie, M.Weatherly, G.C. and Haugen, H.K.Appl. Phys. A 76 (2003) p. 201.CrossRefGoogle Scholar
65Choi, T.Y. and Grigoropoulos, C.P.J. Heat Transfer–Trans. ASME 126 (2004) p. 723.CrossRefGoogle Scholar
66Costache, F.Kouteva-Arguirova, S., and Reif, J.Appl. Phys. A 79 (2004) p. 1429.CrossRefGoogle Scholar
67Coyne, E.Magee, J.P.Mannion, P.O'Connor, G.M., and Glynn, T.J.Appl. Phys. A 81 (2005) p. 371.CrossRefGoogle Scholar
68Ngoi, B.K.A.Venkatakrishnan, K.Lim, E.N.L.Tan, B. and Koh, L.H.K.Opt. Lasers Eng. 35 (2001) p. 361.CrossRefGoogle Scholar
69McDonald, J.P.McClelland, A.A.Picard, Y.N. and Yalisove, S.M.Appl. Phys. Lett. 86 264103 (2005).CrossRefGoogle Scholar
70McDonald, J.P.Mistry, V.R.Ray, K.E. and Yalisove, S.M. in “Thin Films—Stresses and Mechanical Properties XI,” edited by Buchheit, T.E.Minor, A.M.Spolenak, R. and Takashima, K. (Mater. Res. Soc. Symp. Proc. 875, Warrendale, PA, 2005) p. 359.Google Scholar
71Serrano, J.R. and Cahill, D.G.J. Appl. Phys. 92 (2002) p. 7606.CrossRefGoogle Scholar
72Xiao, K.Guan, Z.S.Wang, G.J.Jiang, L.Zhu, D.B. and Wang, Y.R.Appl. Phys. Lett. 85 (2004) p. 1934.CrossRefGoogle Scholar
73Hutchinson, J.W. and Suo, Z. in Adv. Appl. Mech. 29 (1992) p. 63.CrossRefGoogle Scholar
74Marshall, D.B. and Evans, A.G.J. Appl. Phys. 56 (1984) p. 2632.CrossRefGoogle Scholar
75McDonald, J.P.Mistry, V.R.Ray, K.E. and Yalisove, S.M.Appl. Phys. Lett. 88 183113 (2006).CrossRefGoogle Scholar
76Sokolowski-Tinten, K. and Linde, D. von der, Phys. Rev. B 61 (2000) p. 2643.CrossRefGoogle Scholar
77Rethfeld, B.Sokolowski-Tinten, K., Linde, D. von der, and Anisimov, S.I.Appl. Phys. A 79 (2004) p. 767.CrossRefGoogle Scholar
78McDonald, J.P.Mistry, V.R.Ray, K.E.Nees, J.A.Moody, N.R. and Yalisove, S.M.Appl. Phys. Lett. 88 153121 (2006).CrossRefGoogle Scholar
79Ke, K.Hasselbrink, E.F. and Hunt, A.J.Anal. Chem. 77 (2005) p. 5083.CrossRefGoogle Scholar
80Kim, T.N.Campbell, K.Groisman, A.Kleinfeld, D. and Schaffer, C.B.Appl. Phys. Lett. 86 201106 (2005).CrossRefGoogle Scholar
81Therriault, D.White, S.R. and Lewis, J.A.Nature Mater. 2 (2003) p. 265.CrossRefGoogle Scholar
82Borowiec, A. and Haugen, H.K.Appl. Phys. Lett. 82 (2003) p. 4462.CrossRefGoogle Scholar
83Crawford, T.H.R.Borowiec, A. and Haugen, H.K.Appl. Phys. A 80 (2005) p. 1717.CrossRefGoogle Scholar
84Tan, B.Sivakumar, N.R. and Venkatakrishnan, K.J. Optics A 7 (2005) p. 169.CrossRefGoogle Scholar
85Venkatakrishnan, K.Sivakumar, N.R. and Tan, B.Appl. Phys. A 76 (2003) p. 143.CrossRefGoogle Scholar
86Korte, F.Koch, J. and Chichkov, B.N.Appl. Phys. A 79 (2004) p. 879.CrossRefGoogle Scholar
87Ren, J.Kelly, M. and Hesselink, L.Opt. Lett. 30 (2005) p. 1740.CrossRefGoogle Scholar
88Perrie, W.Gill, M.Robinson, G.Fox, P. and O'Neill, W., Appl. Surf. Sci. 230 (2004) p. 50.CrossRefGoogle Scholar
89Sun, J. and Longtin, J.P.J. Opt. Soc. Am. B 21 (2004) p. 1081.CrossRefGoogle Scholar