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Power-switching applications beyond silicon: Status and future prospects of SiC and GaN devices

Published online by Cambridge University Press:  08 May 2015

Sima Dimitrijev ,
Jisheng Han ,
Hamid Amini Moghadam  and
Amirhossein Aminbeidokhti
Sima Dimitrijev
Affiliation:
Queensland Micro- and Nanotechnology Centre, Griffith University, Australia; s.dimitrijev@griffith.edu.au
Jisheng Han
Affiliation:
Queensland Micro- and Nanotechnology Centre, Griffith University, Australia; j.han@griffith.edu.au
Hamid Amini Moghadam
Affiliation:
Griffith School of Engineering and Queensland Micro- and Nanotechnology Centre, Griffith University, Australia; hamid.aminimoghadam@griffithuni.edu.au
Amirhossein Aminbeidokhti
Affiliation:
Griffith School of Engineering and Queensland Micro- and Nanotechnology Centre, Griffith University, Australia; amirhossein.aminbeidokhti@griffithuni.edu.au
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Abstract

This article reviews the development of SiC and GaN devices for power-switching applications in the context of four specifically identified application requirements: (1) high-blocking voltage, (2) high-power efficiency, (3) high-switching speed, and (4) normally OFF operation. Specific device and material characteristics, such as ON resistance, parasitic capacitances, and energy-gap values, are compared and discussed in relation to the identified application requirements. Following a review of the fundamental limitations of silicon as a material, this article describes the material advantages that motivated the development of commercially available Schottky diodes and transistors using SiC. The last section analyzes the potential of GaN to enable further technical progress beyond the theoretical limit of Si and to significantly reduce the cost of power-electronic switches.

Keywords

DevicesSiCGaN
Type
Research Article
Information
MRS Bulletin , Volume 40 , Issue 5: Power Electronics with Wide Bandgap Materials , May 2015 , pp. 399 - 405
Copyright
Copyright © Materials Research Society 2015 

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