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Novel materials by atomic layer deposition and molecular layer deposition

Published online by Cambridge University Press:  18 November 2011

Markku Leskelä ,
Mikko Ritala  and
Ola Nilsen
Markku Leskelä
Affiliation:
University of Helsinki, Finland; markku.leskela@helsinki.fi
Mikko Ritala
Affiliation:
University of Helsinki, Finland; Mikko.Ritala@helsinki.fi
Ola Nilsen
Affiliation:
University of Oslo, Norway; ola.nilsen@kjemi.uio.no
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Abstract

Over the past 10 years, the number of materials that can be processed by atomic layer deposition (ALD) has expanded rapidly. Significant progress has been seen in ALD of high-κ oxides, ternary oxides, and noble metals, which have been studied quite extensively. High-κ oxide processes are used today in various industrial applications. However, many new applications are pushing the need for less common compounds, and therefore new processes are being developed (e.g., for fluorides, Li containing compounds, and phosphates). New ALD processes require new designs for volatile precursors to deliver elements with ligands that ensure self-limiting surface reactions. In addition to inorganics, new polymeric and inorganic-organic hybrid materials are opening new frontiers for ALD, including expansion of the process to include molecular layer deposition. A combination of inorganic and organic parts in the deposited layers offers expanding opportunities for tailoring materials properties.

Keywords

Atomic layer depositionthin filmmicroelectronicsdielectricmetallic conductor
Type
Research Article
Information
MRS Bulletin , Volume 36 , Issue 11: Progress and future directions for atomic layer deposition and ALD-based chemistry , November 2011 , pp. 877 - 884
Copyright
Copyright © Materials Research Society 2011

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