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Intrinsic magnetic field effects in organic semiconductors

Published online by Cambridge University Press:  15 July 2014

Markus Wohlgenannt ,
Peter A. Bobbert  and
Bert Koopmans
Markus Wohlgenannt
Affiliation:
Department of Physics and Astronomy, University of Iowa, USA;markus-wohlgenannt@uiowa.edu
Peter A. Bobbert
Affiliation:
Eindhoven University of Technology, The Netherlands;P.A.Bobbert@tue.nl
Bert Koopmans
Affiliation:
Department of Applied Physics, Eindhoven University of Technology, The Netherlands;b.koopmans@tue.nl
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Abstract

The effects of a magnetic field on the current in sandwich devices of a nonmagnetic material in-between two ferromagnetic electrodes are well known. However, magnetic-field effects also occur in the responses of devices of organic semiconductors sandwiched in-between non-ferromagnetic electrodes, providing an entirely new route toward organic spintronics. The precise origins of these “intrinsic” magnetic field effects are still unclear. They appear to be related to spin-selective reactions between paramagnetic entities such as electrons, holes, and triplet excitons. We present an overview of these effects and discuss three recent developments that shed new light on them: (1) tuning of the effects in molecularly engineered systems, (2) the discovery of ultrahigh magnetoresistance in molecular wires, and (3) the discovery of “fringe-field” magnetoresistance.

Keywords

organicsemiconductingspintronicmagnetoresistance (transport)
Type
Research Article
Information
MRS Bulletin , Volume 39 , Issue 7: Organic Spintronics , July 2014 , pp. 590 - 595
Copyright
Copyright © Materials Research Society 2014 

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