CNT FET with Asymmetric Contact Shows Single Electron Transistor Characteristics at Low Temperature

M. Gowtham

doi:10.1557/mrs2008.39

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CNT FET with Asymmetric Contact Shows Single Electron Transistor Characteristics at Low Temperature

Published online by Cambridge University Press: 31 January 2011

M. Gowtham

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Type: Research/Researchers
Information: MRS Bulletin , Volume 33 , Issue 3: Electroactive Polymer Actuators and Sensors , March 2008 , pp. 166

DOI: https://doi.org/10.1557/mrs2008.39 [Opens in a new window]
Copyright: Copyright © Materials Research Society 2008

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CNT FET with Asymmetric Contact Shows Single Electron Transistor Characteristics at Low Temperature

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