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An Overview of SiC Epitaxial Growth

Published online by Cambridge University Press:  29 November 2013

D.J. Larkin
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SiC electronics research has been driven by the continued successful development of SiC technology for high-power and high-frequency semiconductor devices, and for service in high-temperature, corrosive, and high-radiation environments. The development of this technology has been accelerated by the introduction of commercially available SiC wafers, which have decreased in cost with time. The most recently demonstrated commercial SiC-based products include ultraviolet (uv)-flame sensors for terrestrial turbine engines and high-definition-television transmitter systems utilizing SiC-based transistors. Prototype microelectronic SiC devices include high-voltage Schottky rectifiers and power metal-oxide-semiconductor field-effect transistors, microwave and millimeter-wave devices, and high-temperature, radiation-resistant junction FETs (JFETs). These advancements in SiC-based device technology are attributable to both the successful development of commercially available, bulk SiC substrates and the recent advancements in SiC epitaxial layer growth technologies.

Type
Silicon Carbide Electronic Materials and Devices
Information
MRS Bulletin , Volume 22 , Issue 3 , March 1997 , pp. 36 - 41
Copyright
Copyright © Materials Research Society 1997

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