Hostname: page-component-8448b6f56d-c4f8m Total loading time: 0 Render date: 2024-04-19T23:36:41.757Z Has data issue: false hasContentIssue false
  • English
  • Français

Advances in Bulk Crystal Growth of AlN and GaN

Published online by Cambridge University Press:  31 January 2011

Dirk Ehrentraut  and
Zlatko Sitar
Get access

Abstract

Aluminum nitride (AlN) and gallium nitride (GaN) play an essential role in modern electronics, particularly in optoelectronics. Highly efficient light-emitting devices covering the ultraviolet to green spectral region are fabricated from these materials. Despite all efforts, the growth of large-size and high-quality AlN and GaN crystals for substrates, which are thermally and lattice-matched to the AlGaN-based device structures, is still in its infancy. This is due to the high equilibrium vapor pressure of nitrogen above these compounds, which requires growth techniques employing either the vapor phase or liquid solutions. The best commercially available GaN substrates show a high dislocation density of >105 per cm2 and strong bowing with a radius of curvature smaller than 10 m. This article reviews current growth techniques that look promising and may become commercially viable.

Type
Research Article
Information
MRS Bulletin , Volume 34 , Issue 4: Recent Advances in Bulk Crystal Growth , April 2009 , pp. 259 - 265
Copyright
Copyright © Materials Research Society 2009

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1Semicond. Today 1, 23 (2006).Google Scholar
2Briegleb, F., Geuther, A., Ann. Chem. 123, 228 (1862).CrossRefGoogle Scholar
3Slack, G.A., “Aluminum Nitride Crystal Growth,” Final Report, Contract No. F49620–78-C-0021, 1 (1980).Google Scholar
4Noveski, V., Schlesser, R., Mahajan, S., Beaudoin, S., Sitar, Z., J. Cryst. Growth 264, 369 (2004).Google Scholar
5Schlesser, R., Sitar, Z., J. Cryst. Growth 234, 349 (2002).CrossRefGoogle Scholar
6Dugger, C.O., Mater. Res. Bull. 9, 331 (1974).Google Scholar
7Rojo, J.C., Slack, G.A., Morgan, K., Raghothamachar, B., Dudley, M., Schowalter, L.J., J. Cryst. Growth 231, 317 (2001).Google Scholar
8Edgar, J.H., Liu, L., Liu, B., Zhuang, D., Chaudhuri, J., Kuball, M., Rajasingam, S., J. Cryst Growth, 246, 187 (2002).CrossRefGoogle Scholar
9Bickermann, M., Epelbaum, B.M., Winnacker, A., Phys. Status Solidi C 7, 1993 (2003).Google Scholar
10Schlesser, R., Dalmau, R., Sitar, Z., J. Cryst. Growth 241, 416 (2002).CrossRefGoogle Scholar
11Schlesser, R., Dalmau, R., Zhuang, D., Collazo, R., Sitar, Z., J. Cryst. Growth 281, 75 (2005).CrossRefGoogle Scholar
12Balkas, C.M., Sitar, Z., Zheleva, T., Bergman, L., Nemanich, R., Davis, R.F., J. Cryst. Growth 179, 363 (1997).Google Scholar
13Brenner, D.W., Schlesser, R., Sitar, Z., Dalmau, R., Collazo, R., Li, Y., Surf. Sci. 560, L202 (2004).Google Scholar
14Liu, B., Edgar, J.H., Gu, Z., Zhuang, D., Raghothamachar, B., Dudley, M., Sarua, A., Kuball, M., Meyer, H.M., MRS Internet J. Nitride Semicond. Res. 9, 6.6 (2004).Google Scholar
15Schowalter, L.J., Rojo, J.C., Yakolev, N., Shusterman, Y., Dovidenko, K., Wang, R., Bhat, I., Slack, G.A., MRS Internet J. Nitride Semicond. Res. 5S1, W6.7.1 (2000).Google Scholar
16Noveski, V., Schlesser, R., Raghothamachar, B., Dudley, M., Mahajan, S., Beaudoin, S., Sitar, Z., J. Cryst. Growth 279, 13 (2005).Google Scholar
17Dalmau, R., Schlesser, R., Rodriguez, B.J., Nemanich, R.J., Sitar, Z., J. Cryst. Growth 281, 68 (2005).CrossRefGoogle Scholar
18Zhuang, D., Herro, Z.G., Schlesser, R., Raghothamachar, B., Dudley, M., Sitar, Z., J. Electron. Mater. 35, 1513 (2006).Google Scholar
19Herro, Z.G., Zhuang, D., Schlesser, R., Collazo, R., Sitar, Z., J. Cryst. Growth 286, 205 (2006).CrossRefGoogle Scholar
20Balkas, C., Sitar, Z., Zheleva, T., Bergman, L., Shmagin, I.K., Muth, J.F., Kolbas, R.M., Nemanich, R.J., Davis, R.F., Mater. Res. Soc. Symp. Proc. 401, 41 (1997).Google Scholar
21Shi, Y., Xie, Z.Y., Liu, L.H., Liu, B., Edgar, J.H., Kuball, M., J. Cryst. Growth 233, 177 (2001).Google Scholar
22Liu, L., Liu, B., Shi, Y., Edgar, J.H., MRS Internet J. Nitride Semicond. Res. 6, 7.1 (2001).Google Scholar
23Lu, P., Edgar, J.H., Cao, C., Hohn, K., Dalmau, R., Schlesser, R., Sitar, Z., J. Cryst. Growth 310, 2464 (2008).Google Scholar
24Liu, L., Liu, B., Edgar, J.H., Rajasingam, S., Kuball, M., J. Appl. Phys. 92, 5183 (2002).Google Scholar
25Dalmau, R., Schlesser, R., Sitar, Z., Phys. Status Solidi C 2, 2036 (2005).CrossRefGoogle Scholar
26Sarney, W.L., Salamanca-Riba, L., Hossain, T., Zhou, P., Jayatirtha, H.N., Kang, H.H., Vispute, R.D., Spencer, M., Jones, K.A., MRS Internet J. Nitride Semicond. Res. 5S1, W5.5.1 (1999).Google Scholar
27Epelbaum, B.M., Bickermann, M., Winnacker, A., Mater. Sci. Forum 433–436, 983 (2003).Google Scholar
28Zhuang, D., Herro, Z.G., Schlesser, R., Sitar, Z., J. Cryst. Growth 287, 372 (2006).Google Scholar
29Strassburg, M., Senawiratne, J., Dietz, N., Haboeck, U., Hoffmann, A., Noveski, V., Dalmau, R., Schlesser, R., Sitar, Z., J. Appl. Phys. 96, 5870 (2004).Google Scholar
30Herro, Z.G., Zhuang, D., Schlesser, R., Collazo, R., Sitar, Z., Mater. Res. Soc. Symp. Proc. 892, FF21.01.1 (2006).Google Scholar
31Schujman, S.B., Schowalter, L.J., Bondokov, R.T., Morgan, K.E., Liu, W., Smart, J.A., Bettles, T., J. Cryst. Growth 310, 887 (2008).Google Scholar
32Karpiński, J., Jun, J., Porowski, S., J. Cryst. Growth 66, 1 (1984).CrossRefGoogle Scholar
33Utsumi, W., Saitoh, H., Kaneko, H., Watanuki, T., Aoki, K., Shimomura, O., Nat. Mater. 2, 735 (2003).CrossRefGoogle Scholar
34Porowski, S., J. Cryst. Growth 166, 583 (1996).Google Scholar
35Grzegory, I., Bćkowski, M., Porowski, S., in Bulk Crystal Growth of Electronic, Optical and Optoelectronic Materials, Capper, P., Ed. (Wiley, Chichester, UK, 2005) p. 173.Google Scholar
36Ehrentraut, D., Kagamitani, K., Yokoyama, C., Fukuda, T., J. Cryst. Growth 319, 891 (2008).Google Scholar
37Wang, B., Callahan, M.J., Cryst. Growth Des. 6, 1227 (2006).CrossRefGoogle Scholar
38Dwiliński, R., Doradziński, R., Garczyiński, J., Sierzputowski, L.P., Puchalski, A., Kanbara, Y., Yagi, K., Minakuchi, H., Hayashi, H., J. Cryst. Growth 310, 3911 (2008).Google Scholar
39Dwiliński, R., Doradziński, R., Garczyiński, J., Sierzputowski, L., Baranowski, J.M., Kamińska, M., Mater. Sci. Eng. B50, 46 (1997).Google Scholar
40Kagamitani, Y., Ehrentraut, D., Yoshikawa, A., Hoshino, H., Fukuda, T., Kawabata, S., Inaba, K., Jpn. J. Appl. Phys. 45, 4018 (2006).CrossRefGoogle Scholar
41Ehrentraut, D., Hoshino, H., Kagamitani, Y., Yoshikawa, A., Fukuda, T., Itoh, H., Kawabata, S., J. Mater. Chem. 17, 886 (2007).CrossRefGoogle Scholar
42Ehrentraut, D., Sato, H., Kagamitani, Y., Sato, H., Yoshikawa, A., Fukuda, T., Prog. Cryst. Growth Charact. Mater. 52, 280 (2006).CrossRefGoogle Scholar
43Yamane, H., Shimada, M., Clarke, S.J., DiSalvo, F.J., Chem. Mater. 9, 413 (1997).Google Scholar
44Aoki, M., Yamane, H., Shimada, M., Sarayama, S., DiSalvo, F.J., J. Cryst. Growth 242, 70 (2002).CrossRefGoogle Scholar
45Kawamura, F., Morishita, M., Tanpo, M., Imade, M., Yoshimura, M., Kitaoka, Y., Mori, Y., Sasaki, T., J. Cryst. Growth 310, 3946 (2008).Google Scholar
46Maruska, H.P., Tietjen, J.J., Appl. Phys. Lett. 15, 327 (1969).CrossRefGoogle Scholar
47Gogova, D., Siche, D., Fornari, R., Monemar, B., Gibart, P., Dobos, L., Pécz, B., Tuomisto, F., Bayazitov, R., Zollo, G., Semicond. Sci. Technol. 21, 702 (2006).Google Scholar
48Łucznik, B., Pastuszka, B., Grzegory, I., Boćkowski, M., Kamler, G., Litwin-Staszewska, E., Porowski, S., J. Cryst. Growth 281, 38 (2005).Google Scholar
49Motoki, K., Okahisa, T., Hirota, R., Nakahata, S., Uematsu, K., Matsumoto, N., J. Cryst. Growth 305, 377 (2007).CrossRefGoogle Scholar
50Waltereit, P., Brandt, O., Trampert, A., Grahn, H.T., Menninger, J., Ramsteiner, M., Reiche, M., Ploog, K.H., Nature 406, 865 (2000).Google Scholar
51Compound Semiconductor 14, 8 (2008).Google Scholar
52Hanser, D., Tutor, M., Preble, E., Williams, M., Xu, X., Tsvetkov, D., Liu, L., J. Cryst. Growth 305, 372 (2007).Google Scholar
53Raghothamachar, B., Vetter, W.M., Dudley, M., Dalmau, R., Schlesser, R., Sitar, Z., Michaels, E., Kolis, J.W., J. Cryst. Growth 246, 271–280 (2002).Google Scholar
54Wu, B., Ma, R., Zhang, Hui, Dudley, M., Schlesser, R., Sitar, Z., J. Cryst. Growth 253, 326–339 (2003).Google Scholar