Skip to main content Accessibility help
×
Home
Hostname: page-component-cf9d5c678-dksz7 Total loading time: 0.428 Render date: 2021-07-29T21:32:01.539Z Has data issue: true Feature Flags: { "shouldUseShareProductTool": true, "shouldUseHypothesis": true, "isUnsiloEnabled": true, "metricsAbstractViews": false, "figures": true, "newCiteModal": false, "newCitedByModal": true, "newEcommerce": true, "newUsageEvents": true }

Article contents

Properties of Dopants in ZnGeP2, CdGeAs2, AgGaS2 and AgGaSe2

Published online by Cambridge University Press:  29 November 2013

Get access

Extract

Ternary-chalcopyrite structure ZnGeP2, CdGeAs2 (II-IV-V2) and AgGaS2, AgGaSe2 (I-III-VI2) compounds are currently of technological interest. They show the most promise for practical nonlinear optical applications in the areas of high-efficiency optical parametric oscillators and frequency up-converters for the infrared (ir) range as well as for widespectral-range optoelectronic devices. (See also the article by Schunemann, Schepler, and Budni in this issue.) However extensive realization of their potential has still not been achieved. One of the principal difficulties in the way to obtaining high-device-quality ZnGeP2, CdGeAs2, AgGaS2, and AgGaSe2 single crystals is undesired optical absorption in their transparency range near the fundamental band edge induced by lattice-related defects. This article summarizes selected aspects of dopant-incorporation techniques of these crystals including dopant choice of dopant material and monitoring of dopant incorporation as done in our laboratory.

In general for the ternary chalcopyrite compounds, doping-incorporation processes are more complicated in comparison to those of binary zinc-blende III-V compounds. The most common sources of dominant incorporation of acceptors and donors in as-grown chalcopyrites are believed to appear from (1) nonstoichiometric melts as well as by doping with different elements during the growth process and (2) incomplete removal of disorder on the cation sublattice during subsequent cooling. Furthermore the chalcopyrite structure II-IV-V2 undergoes a disorder-order phase transition upon cooling through approximately 1220 K for ZnGeP2 and 900 K for CdGeAs2. At these transition temperatures, solidification can be complicated also by supercooling phenomena, and the crystals transform from the cubic zinc-blende structure (where Zn atoms randomly fill cation sites) to the ordered chalcopyrite structure (e.g., when Zn and Ge occupy alternating cation sites in ZnGeP2).

Type
Emergence of Chalcopyrites as Nonlinear Optical Materials
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1.Goryunova, N.A. and Volov, Yu.A., eds., II-IV-V2 Semiconductors (Soviet Radio, Moscow, 1974).Google Scholar
2.Shay, J.L. and Wernick, J.HY., Ternary Chalcopyrite, Semconductors: Growth, Electronic Properties, and Applications (Pergamon Press, New York, 1975) p. 168.Google Scholar
3.Rud', Yu.V., Jpn. J. Appl. Phys. 32 (1993) p. 512.CrossRefGoogle Scholar
4.Rud', V.Yu. and Rud', Yu.V., Jpn. J. Appl. Phys. 32 (1993) p. 672.CrossRefGoogle Scholar
5.Rud', Yu.V., Semiconductors 28 (1994) p. 1105.Google Scholar
6.Borshchevskii, A.S. and Roenkov, N.D., Russ. J. Inorg. Chem. 14 (1969) p. 1183.Google Scholar
7.Bairamov, B.H., Negoduyko, V.K., Rud', Yu.V., Toporov, V.V., Voitenko, V.A., Schunemann, P.G., Ohmer, M.C., and Fernelius, N.C., in Infrared Applications of Semiconductors—Materials, Processing and Devices, edited by Manasreh, M.O., Myers, T.H., Julien, F.H., and Colon, J.E. (Mater. Res. Symp. Proc. 450, Pittsburgh, 1997) p. 339.Google Scholar
8.Bairamov, B.H., Ipatova, I.P., and Voitenko, V.A., Phys. Reports 229 (1993) p. 221.CrossRefGoogle Scholar
9.Bairamov, B.H., Voitenko, V.A., Ipatova, I.P., Negoduyko, V.K. and Toporov, V. V., Phys. Rev. B 50 (1994) p. 14923.CrossRefGoogle Scholar
10.Bairamov, B.H., Irmer, G., Monecke, J., Negoduyko, V.K., Toporov, V.V., Voitenko, V.A., and Zakharchenya, B. P., Phys. Status Solidi B 204 (1997) p. 456.3.0.CO;2-J>CrossRefGoogle Scholar

Send article to Kindle

To send this article to your Kindle, first ensure no-reply@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about sending to your Kindle. Find out more about sending to your Kindle.

Note you can select to send to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

Properties of Dopants in ZnGeP2, CdGeAs2, AgGaS2 and AgGaSe2
Available formats
×

Send article to Dropbox

To send this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Dropbox.

Properties of Dopants in ZnGeP2, CdGeAs2, AgGaS2 and AgGaSe2
Available formats
×

Send article to Google Drive

To send this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Google Drive.

Properties of Dopants in ZnGeP2, CdGeAs2, AgGaS2 and AgGaSe2
Available formats
×
×

Reply to: Submit a response

Please enter your response.

Your details

Please enter a valid email address.

Conflicting interests

Do you have any conflicting interests? *