Hostname: page-component-78c5997874-g7gxr Total loading time: 0 Render date: 2024-11-19T12:23:54.245Z Has data issue: false hasContentIssue false
  • English
  • Français

Intrinsic Point Defects and Their Control in Silicon Crystal Growth and Wafer Processing

Published online by Cambridge University Press:  31 January 2011

R. Falster  and
V. V. Voronkov
Get access

Extract

Silicon produced for the microelectronics industry is far and away the purest and most perfect crystalline material manufactured today. It is fabricated routinely and in very large volumes. Many of the advances in integrated-circuit (IC) manufacturing achieved in recent years would not have been possible without parallel advances in silicon-crystal quality and defect engineering. Transition-metal contamination is a case in point. Essentially all practical problems (minority carrier lifetime, metal precipitation, stacking faults, etc.) associated with metal contaminants have largely been solved through advances in crystal purity.

Type
Research Article
Information
MRS Bulletin , Volume 25 , Issue 6: Defects and Diffusion in Silicon Processing , June 2000 , pp. 28 - 32
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1.Voronkov, V.V., J. Cryst. Growth 59 (1982) p. 625.Google Scholar
2.Voronkov, V.V., Voronkova, G.I., Veselovskaya, N.V., Milvidski, M.G., and Chervonyi, I.F., Sov. Phys. Crystallogr. 29 (1984) p. 688.Google Scholar
3.Voronkov, V.V. and Falster, R., J. Cryst. Growth 194 (1998) p. 76.Google Scholar
4.Ueki, T., Itsumi, M., and Takeda, T., Appl. Phys. Lett. 70 (1997) p. 1248.CrossRefGoogle Scholar
5.Nishimura, N., Yamaguchi, Y., Nakamura, K., Jablonski, J., and Watanabe, M., High Purity Silicon V, edited by Claeys, C.L., Rai-Choudhury, P., Watanabe, M., Stallhofer, P., and Dawson, H.J. (The Electrochemical Society Proc. 98–13, Boston, 1998) p. 188.Google Scholar
6.Park, J.G., Lee, G.S., Park, J.M., Chon, S.M., and Chung, H.K., Defects in Silicon III, edited by Bullis, W.M., Lin, W., Wagner, P., Abe, T., and Kobayashi, S. (The Electrochemical Society Proc. 99–1, Seattle, WA, 1999) p. 324.Google Scholar
7.Falster, R., Voronkov, V.V., Holzer, J.C., Markgraf, S., McQuaid, S., and Mule'Stagno, L., Semiconductor Silicon/1998 (8th Int. Symp.,) edited by Huff, H.R., Tsuya, H., and Gösele, U. (The Electrochemical Society Proc. 98–1, San Diego, CA, 1998) p. 468.Google Scholar
8.Voronkov, V.V. and Falster, R., J. Cryst. Growth 204 (1999) p. 462.Google Scholar
9.Foell, H. and Kolbesen, B.O., Appl.Phys. 8 (1975) p. 319.CrossRefGoogle Scholar
10.Petroff, P.M. and de Kock, A.J.R., J. Cryst. Growth 36 (1976) p. 4.CrossRefGoogle Scholar
11.Puzanov, N.I. and Eidenzon, A.M., Semicond. Sci. Technol. 7 (1992) p. 406.CrossRefGoogle Scholar
12.Saishoji, T., Nakamura, K., Nakajima, H., Yokoyama, T., Ishikawa, T., and Tomioka, J., High Purity Silicon V, edited by Claeys, C.L., Rai-Choudhury, P., Watanabe, M., Stallhofer, P., and Dawson, H.J. (The Electrochemical Society Proc. 98–13, Boston, 1998) p. 28.Google Scholar
13.Falster, R., Fisher, G.R., and Ferrero, G., Appl. Phys. Lett. 59 (1991) p. 809.Google Scholar
14.Falster, R., Gambaro, D., Olmo, M., Cornara, M., and Korb, H., in Defect and Impurity Engineered Semiconductors and Devices II, edited by Ashok, S., Chevallier, J., Sumino, K., Sopori, B.L., and Götz, W. (Mater. Res. Soc. Symp. Proc. 510, Warrendale, PA, 1998) p. 27.Google Scholar
15.Falster, R. and Voronkov, V.V., “The Engineering of Intrinsic Point Defects in Silicon Wafers and Crystals,” Mater. Sci. Eng., B 73 (2000) p. 69.CrossRefGoogle Scholar