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Thin -film transistors based on Zinc Oxide channel layer and Molybdenum doped Indium Oxide transparent electrodes

Published online by Cambridge University Press:  26 January 2016

Mateusz Tomasz Mądzik ,
Elangovan Elamurugu ,
Raquel Flores  and
Jaime Viegas
Mateusz Tomasz Mądzik*
Affiliation:
Masdar Institute, Abu Dhabi, United Arab Emirates
Elangovan Elamurugu
Affiliation:
Masdar Institute, Abu Dhabi, United Arab Emirates
Raquel Flores
Affiliation:
Masdar Institute, Abu Dhabi, United Arab Emirates
Jaime Viegas
Affiliation:
Masdar Institute, Abu Dhabi, United Arab Emirates
*
*(Email: mtmadzik@masdar.ac.ae)
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Abstract

Thin-film transistors (TFT) were fabricated at room-temperature (RT) utilizing zinc oxide (ZnO) channel and indium molybdenum oxide (IMO) electrodes. The common bottom-gate TFTs were fabricated on commercially available thermal silicon oxide (100 nm thick) coated silicon wafers. A total of 100 devices were made in a 1 inch square area as 10 × 10 matrix, by varying the channel width and length, between 5 µm and 300 µm. Output and transfer characteristics of the fabricated devices were extracted from a semiconductor parameter analyzer. A threshold voltage (VTh) of 10 V and an ION/IOFF ratio of 1 × 10-5 were obtained. The impact of channel dimensions on the device performance was investigated, confirming that the saturation current (Isat) is directly proportional to the channel width (W), and inversely proportional to channel length (L), in agreement with field effect device theory.

Keywords

electronic materialmicroelectronicssputtering
Type
Articles
Information
MRS Advances , Volume 1 , Issue 4: Electronics and Photonics , 2016 , pp. 281 - 285
Copyright
Copyright © Materials Research Society 2016 

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References

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