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Novel Field Effect Transistor Fabrication Based on Non-Graphene 2D Materials

Published online by Cambridge University Press:  07 June 2017

Yu-Tao Li
Affiliation:
Institute of Microelectronics & Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing 10084, China State Key Laboratory of Transducer Technology, Chinese Academy of Sciences
Hai-Ming Zhao
Affiliation:
Institute of Microelectronics & Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing 10084, China
He Tian
Affiliation:
Institute of Microelectronics & Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing 10084, China
Peng-Zhi Shao
Affiliation:
Institute of Microelectronics & Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing 10084, China
Xin Xin
Affiliation:
Institute of Microelectronics & Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing 10084, China
Hui-Wen Cao
Affiliation:
Institute of Microelectronics & Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing 10084, China
Ning-Qin Deng
Affiliation:
Institute of Microelectronics & Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing 10084, China
Yi Yang
Affiliation:
Institute of Microelectronics & Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing 10084, China
Tian-Ling Ren*
Affiliation:
Institute of Microelectronics & Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing 10084, China State Key Laboratory of Transducer Technology, Chinese Academy of Sciences
*
*Corresponding Author E-mail: RenTL@tsinghua.edu.cn

Abstract

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In this paper, field effect transistors (FET) based on different kinds of non-graphene materials are introduced, which are MoS2, WSe2 and black phosphorus (BP). Those devices have their unique features in fabrication process compared with conventional FETs. Among them, MoS2 FET shows better electrical characteristics by applying a SiO2 protective layer; WSe2 FET is fabricated based on a new low pressure chemical vapor deposition (LPCVD) method; BP FET acquires high on/off ratio and high hole mobility by using a simple dry transfer method. Those novel non-graphene materials inspire new design and fabrication process of basic logic device.

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Articles
Copyright
Copyright © Materials Research Society 2017 

References

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