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Metal whisker growth induced by localized, high-intensity DC electric fields

Published online by Cambridge University Press:  23 April 2018

Vamsi Borra Open the ORCID record for Vamsi Borra [Opens in a new window] ,
Osama Oudat ,
Daniel G. Georgiev ,
Victor G. Karpov  and
Diana Shvydka
Vamsi Borra*
Affiliation:
Department of EECS, University of Toledo, Toledo, Ohio, U.S.A.
Osama Oudat
Affiliation:
Department of Physics and Astronomy, University of Toledo, Toledo, Ohio, U.S.A.
Daniel G. Georgiev
Affiliation:
Department of EECS, University of Toledo, Toledo, Ohio, U.S.A.
Victor G. Karpov
Affiliation:
Department of Physics and Astronomy, University of Toledo, Toledo, Ohio, U.S.A.
Diana Shvydka
Affiliation:
Department of Radiation Oncology, University of Toledo, Toledo, Ohio, U.S.A.
*
*(Email: vamsi.borra@utoledo.edu)
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Abstract

In this work, a very high, locally applied electric field was used to induce whisker nucleation on an Sn film. The field was generated by using a conductive AFM tip and applying a voltage bias between the sample and the conductive cantilever. The tip-sample separation distance was thus controllable, and any dielectric breakdown could be avoided. At locations where the AFM tip was positioned for an extended period, minuscule whiskers were observed, whose growth direction matched vertical orientation of the field.

Keywords

Snnucleation & ampgrowthatom probe microscopyelectronic material
Type
Articles
Information
MRS Advances , Volume 3 , Issue 57-58: Electronic and Photonic Materials , 2018 , pp. 3367 - 3372
Copyright
Copyright © Materials Research Society 2018 

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References

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