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Epitaxial Growth of InAlN/GaN Heterostructures on Silicon Substrates in a Single Wafer Rotating Disk MOCVD Reactor

Published online by Cambridge University Press:  13 February 2017

Jing Lu ,
Jie Su ,
Ronald Arif ,
George D. Papasouliotis  and
Ajit Paranjpe
Jing Lu*
Affiliation:
Veeco MOCVD Operations, 394 Elizabeth Avenue, Somerset, NJ 08873, USA.
Jie Su
Affiliation:
Veeco MOCVD Operations, 394 Elizabeth Avenue, Somerset, NJ 08873, USA.
Ronald Arif
Affiliation:
Veeco MOCVD Operations, 394 Elizabeth Avenue, Somerset, NJ 08873, USA.
George D. Papasouliotis
Affiliation:
Veeco MOCVD Operations, 394 Elizabeth Avenue, Somerset, NJ 08873, USA.
Ajit Paranjpe
Affiliation:
Veeco MOCVD Operations, 394 Elizabeth Avenue, Somerset, NJ 08873, USA.
*
*(Email: jilu@veeco.com)
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Abstract

InAlN films and InAlN/GaN high electron mobility transistor (HEMT) structures were demonstrated on 150mm <111> Si using Veeco’s Propel single wafer metal-organic chemical vapor deposition (MOCVD) system. Smooth surfaces with root mean square (rms) roughness of 0.68 nm were observed in a 5x5 μm2 atomic force microscope (AFM) scan. X-ray diffraction (XRD) analysis shows well-defined layer peaks and fringes, indicating good structural quality and abrupt layer interfaces. Thickness uniformity of InAlN is 0.87%, 1σ, for a 7-point XRD measurement across the 150 mm wafer. Secondary ion mass spectrometry (SIMS) analysis confirms the uniform indium depth profile and the presence of abrupt layer interfaces. Negligible Ga (< 100 ppm, atomic) incorporation was detected in the InAlN bulk film. Film sheet resistance of 230Ω/sq, charge of 2.1×1013/cm2, and mobility of 1270 cm2/V.s were measured on a prototypical InAlN/GaN HEMT structure comprising a 10 nm-thick, 17% indium, InAlN barrier.

Keywords

metalorganic depositionIII-Vthin film
Type
Articles
Information
MRS Advances , Volume 2 , Issue 5: Electronics, Magnetics and Photonics , 2017 , pp. 329 - 334
Copyright
Copyright © Materials Research Society 2017 

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References

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