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Epitaxial Growth of Bendable Cubic NiO and In2O3 Thin Films on Synthetic Mica for p- and n-type Wide-Bandgap Semiconductor Oxides

Published online by Cambridge University Press:  31 January 2020

Yuta Arata Open the ORCID record for Yuta Arata [Opens in a new window] ,
Hiroyuki Nishinaka ,
Kazuki Shimazoe  and
Masahiro Yoshimoto
Yuta Arata*
Affiliation:
Department of Electronics, Kyoto Institute of Technology, Matsugasaki, Sakyo-ku, Kyoto, 606-8585, Japan.
Hiroyuki Nishinaka
Affiliation:
Faculty of Electrical Engineering and Electronics, Kyoto Institute of Technology, Matsugasaki, Sakyo-ku, Kyoto, 606-8585, Japan.
Kazuki Shimazoe
Affiliation:
Department of Electronics, Kyoto Institute of Technology, Matsugasaki, Sakyo-ku, Kyoto, 606-8585, Japan.
Masahiro Yoshimoto
Affiliation:
Faculty of Electrical Engineering and Electronics, Kyoto Institute of Technology, Matsugasaki, Sakyo-ku, Kyoto, 606-8585, Japan.
*
*(Email: m8621003@edu.kit.ac.jp)
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Abstract

Bendable p-type NiO and n-type In2O3 thin films were epitaxially grown on synthetic mica using mist chemical vapor deposition. It was found that at a growth temperature of 400 °C, epitaxially grown cubic (111) NiO thin films developed twin rotational domains, and the epitaxial relationship between each domain and the substrate was (111) NiO [1-10] or [10-1] || (001) synthetic mica [100]. In the visible light region, the epitaxial NiO thin films showed high transparencies, and their cut-offs appeared in the UV region. Additionally, at a growth temperature of 500 °C, cubic (111) In2O3 thin films with and without Sn doping were epitaxially grown on synthetic mica. As a result of the plasma oscillation of free carriers, Sn-doped In2O3 thin films exhibited reflection characteristics in the infrared region, while maintaining their visible light transmission characteristics. Furthermore, compared with non-doped In2O3, Sn doping decreased the sheet resistance by two digits.

Keywords

crystal growthflexibletransparent conductor2D materialschemical vapor deposition (CVD) (deposition)
Type
Articles
Information
MRS Advances , Volume 5 , Issue 31-32: Fabrication of Functional Materials and Nanomaterials , 2020 , pp. 1671 - 1679
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Copyright
Copyright © Materials Research Society 2020

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References

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