Article contents
Epitaxial GdN/SmN-based superlattices grown by molecular beam epitaxy
Published online by Cambridge University Press: 07 February 2017
Abstract
GdN/SmN based superlattices have been grown by molecular beam epitaxy. In-situ reflection high energy electron diffraction was used to evaluate the evolution of the epitaxial growth and the structural properties were assessed by ex-situ X-ray diffraction. Hall Effect and resistivity measurements as a function of the temperature establish that the superlattices are heavily n-type doped semiconductors and the electrical conduction resides in both REN layers, SmN and GdN.
- Type
- Articles
- Information
- Copyright
- Copyright © Materials Research Society 2017
References
REFERENCES
- 2
- Cited by