Hostname: page-component-77c89778f8-m8s7h Total loading time: 0 Render date: 2024-07-19T00:54:51.570Z Has data issue: false hasContentIssue false
  • English
  • Français

Development and Characterization of Tungsten Disulfide Ink for Ink-jet Printing

Published online by Cambridge University Press:  24 July 2018

Joshua Mayersky  and
Rashmi Jha
Joshua Mayersky*
Affiliation:
University of Cincinnati, 2600 Clifton Ave. | Cincinnati, OH | 45221
Rashmi Jha
Affiliation:
University of Cincinnati, 2600 Clifton Ave. | Cincinnati, OH | 45221
*
*(Email: mayersjd@mail.uc.edu)
Get access

Abstract

In this work, a printable tungsten disulfide (WS2) based ink is developed from readily available WS2 powder (0.6 µm average particle size), and an ink-jet printing based deposition method for a tungsten disulfide film is presented. WS2 flake coverage and bulk electrical characteristics under three different irradiance conditions are examined and discussed. Presence of excitons in the absorbance of the inks is performed by optical UV-Vis spectrometry. Metrics using the A exciton peak generated by the few-layered flakes are used to calculate the average flake lateral dimensions, the concentration of WS2 in the inks after size selection and filtering, as well as the average monolayer count of the flakes. After printing, scanning electron microscopy is used to confirm average flake lateral size and average flake area coverage, while an atomic force microscope is used to confirm flake thickness.

Keywords

2D materialsink-jet printingphotoconductivity
Type
Articles
Information
MRS Advances , Volume 3 , Issue 49: Manufacturing/Artificial Intelligence for Materials Development , 2018 , pp. 2953 - 2958
Copyright
Copyright © Materials Research Society 2018 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

Mutlu, Z., Mater. Chem. Phys. 176, 52–57 (2016).CrossRefGoogle Scholar
Withers, F., Bointon, T. H., Hudson, D. C., Craciun, M. F. and Russo, S., Sci. Rep. 4 (4967), (2014).Google Scholar
Hussain, S., Khan, M. F., Shehzad, M. A., Vikraman, D., Iqbal, M. Z., Choi, D.-C., Song, W., An, K.-S., Seo, Y., Eom, J., Lee, W.-G. and Jung, J., J. Mater. Chem. C 4, 7846–7852 (2016).CrossRefGoogle Scholar
Song, J.-G., Park, J., Lee, W., Choi, T., Jung, H., Lee, C. W., Hwang, S.-H., Myoung, J. M., Jung, J.-H., Kim, S.-H., Lansalot-Matras, C. and Kim, H., ACS Nano 7 (12), 11333–11340 (2013).CrossRefGoogle Scholar
Weiß, V., Seeger, S., Ellmer, K. and Mientus, R., J. Appl. Phys. (Melville, NY, U. S.) 101 (103502), (2007).Google Scholar
Park, J., Lee, W., Choi, T., Hwang, S.-H., Myoung, J. M., Jung, J.-H., Kim, S.-H. and Kim, H., Nanoscale 7, 1308–1313 (2015).CrossRefGoogle ScholarPubMed
Coleman, J. N., Lotya, M., O’neill, A., Bergin, S. D., King, P. J., Khan, U., Young, K., Gaucher, A., De, S., Smith, R. J., Shvets, I. V., Arora, S. K., Stanton, G., Kim, H.-Y., Lee, K., Kim, G. T., Duesberg, G. S., Hallam, T., Boland, J. J., Wang, J. J., Donegan, J. F., Grunlan, J. C., Moriarty, G., Shmeliov, A., Nicholls, R. J., Perkins, J. M., Grieveson, E. M., Theuwissen, K., McComb, D. W., Nellist, P. D. and Nicolosi, V., Science 331 (6017), 568-571 (2011).CrossRefGoogle Scholar
Backes, C., Smith, R. J., McEvoy, N., Berner, N. C., McCloskey, D., Nerl, H. C., O’Neill, A., King, P. J., Higgins, T., Hanlon, D., Scheuschner, N., Maultzsch, J., Houben, L., Duesberg, G. S., Donegan, J. F., Nicolosi, V. and Coleman, J. N., Nat. Commun. 5 (4576), (2014).CrossRefGoogle Scholar
Backes, C., Higgins, T. M., Kelly, A., Boland, C., Harvey, A., Hanlon, D. and Coleman, J. N., Chem. Mater. 29, 243–255 (2016).CrossRefGoogle Scholar
Vega-Mayoral, V., Backes, C., Hanlon, D., Khan, U., Gholamvand, Z., O’Brien, M., Duesberg, G. S., Gadermaier, C. and Coleman, J. N., Adv. Funct. Mater. 26, 1028–1039 (2015).CrossRefGoogle Scholar
Kim, J., Kwon, S., Cho, D.-H., Kang, B., Kwon, H., Kim, Y., Park, S. O., Jung, G. Y., Shin, E., Kim, W.-G., Lee, H., Ryu, G. H., Choi, M., Kim, T. H., Oh, J., Park, S., Kwak, S. K., Yoon, S. W., Byun, D., Lee, Z. and Lee, C., Nat. Commun. 6 (8294), (2015).Google Scholar
Michel, M., Desai, J. A., Biswas, C. and Kaul, A. B., Nanotechnology 27, (2016).CrossRefGoogle Scholar
Maples, R. E., Petroleum Refinery Process Economics, (PennWell Corp, 2000).Google Scholar
Hussain, A. M., Sevilla, G. A. T., Rader, K. R. and Hussain, M. M, presented at the 2013 Saudi International Electronics, Communications and Photonics Conference, Fira, Greece, (2013).Google Scholar