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Bandgap Energies of Cubic AlxGa1−xNyAs1−y Calculated by Means of the Dielectric Method

Published online by Cambridge University Press:  05 February 2016

Hiroyuki Naoi  and
Takeyuki Matsumoto
Hiroyuki Naoi*
Affiliation:
Department of Electrical and Computer Engineering, National Institute of Technology, Wakayama College, 77 Nojima, Nada-Cho, Gobo, Wakayama 644−0023, Japan
Takeyuki Matsumoto
Affiliation:
Department of Electrical and Computer Engineering, National Institute of Technology, Wakayama College, 77 Nojima, Nada-Cho, Gobo, Wakayama 644−0023, Japan
*
*(Email: Hiro.Naoi@colostate.edu)
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Abstract

Bandgap energies of the group III-V quaternary alloy semiconductor, cubic AlxGa1−xNyAs1−y, were calculated by means of the dielectric method. While only GaN and GaAs are considered to be direct transition type among the four constituent binary compounds of this quaternary alloy system, the calculation results show that the bandgap energy range covered in the direct transition regime of this alloy system was further extended to the higher energy side of GaN as well as to the lower energy sides of GaAs. The extension to the higher energy side was attributed to the larger direct bandgap of AlN. On the other hand, the extension to the lower energy side was caused by the large bowing in the bandgap energy between group III nitrides and arsenides. Calculations under lattice matching to Si and GaAs are also presented.

Keywords

compoundelectronic materialIII-V
Type
Articles
Information
MRS Advances , Volume 1 , Issue 2: Energy and Sustainability , 2016 , pp. 175 - 180
Copyright
Copyright © Materials Research Society 2016 

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References

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