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Anomalous Reverse Breakdown of CIGS Devices: Theory and Simulation

Published online by Cambridge University Press:  11 May 2017

Marco Nardone  and
Saroj Dahal
Marco Nardone*
Affiliation:
Bowling Green State University, E Wooster Street, Bowling Green, OH, 43403, U.S.A
Saroj Dahal
Affiliation:
Bowling Green State University, E Wooster Street, Bowling Green, OH, 43403, U.S.A
*
*(Email: marcon@bgsu.edu)
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Abstract

Copper indium gallium selenium (CIGS) photovoltaic (PV) devices exhibit unique reverse breakdown characteristics in terms of the dependence on temperature, light intensity, photon energy, and buffer layer material. In this work, the theoretical basis of potential reverse breakdown mechanisms are described and compared to available data. Quantitative analysis performed with semiconductor device simulation indicates that none of the conventional reverse breakdown mechanisms can account for the observations. Further work to better understand the reverse current-voltage characteristics of CIGS PV devices will provide insight to improve performance and reliability.

Keywords

photovoltaicsemiconductingsimulation
Type
Articles
Information
MRS Advances , Volume 2 , Issue 53: Energy Storage and Conversion , 2017 , pp. 3163 - 3168
Copyright
Copyright © Materials Research Society 2017 

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References

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