Cu films are widely used in electronics for interconnections. In some applications, reliable thin-film connecting elements having high electrical conductivity, mechanical stability and adhesion to a glass substrate are required. In this case the length of the elements amounts to tens of centimetres. In this paper, Cu was used as the basis for the connecting elements. To ensure high adhesion Cr was used as an underlayer. The paper investigates the structure, electrical conductivity, adhesion, defect formation of Cu, Cu-Cr, Cr-Cu-Cr thin-film conductors. As a result of the performed research, the regularities of changes of the film structure, electrical conductivity, adhesion, defect formation depending on the technological process parameters were established. Physical and technological mechanisms determining the observed patterns are considered. The research results are used in the device production technology.