Skip to main content Accessibility help
×
Home
Hostname: page-component-79b67bcb76-c2bf7 Total loading time: 0.178 Render date: 2021-05-14T02:45:23.888Z Has data issue: true Feature Flags: { "shouldUseShareProductTool": true, "shouldUseHypothesis": true, "isUnsiloEnabled": true, "metricsAbstractViews": false, "figures": false, "newCiteModal": false, "newCitedByModal": true, "newEcommerce": true }

Article contents

Simulation Study on Reproducing Resistive Switching Effect by Soret and Fick Diffusion in Resistive Random Access Memory

Published online by Cambridge University Press:  13 June 2016

Kentaro Kinoshita
Affiliation:
Department of Information and Electronics, Graduate School of Engineering, Tottori University, 4-101 Koyama-Minami, Tottori 680-8552, Japan. Tottori Integrated Frontier Research Center, 4-101 Koyama-Minami, Tottori 680-8552, Japan.
Ryosuke Koishi
Affiliation:
Department of Information and Electronics, Graduate School of Engineering, Tottori University, 4-101 Koyama-Minami, Tottori 680-8552, Japan.
Takumi Moriyama
Affiliation:
Department of Information and Electronics, Graduate School of Engineering, Tottori University, 4-101 Koyama-Minami, Tottori 680-8552, Japan. Tottori Integrated Frontier Research Center, 4-101 Koyama-Minami, Tottori 680-8552, Japan.
Kouki Kawano
Affiliation:
Department of Information and Electronics, Graduate School of Engineering, Tottori University, 4-101 Koyama-Minami, Tottori 680-8552, Japan.
Hidetoshi Miyashita
Affiliation:
Department of Information and Electronics, Graduate School of Engineering, Tottori University, 4-101 Koyama-Minami, Tottori 680-8552, Japan. Tottori Integrated Frontier Research Center, 4-101 Koyama-Minami, Tottori 680-8552, Japan.
Sang-Seok Lee
Affiliation:
Department of Information and Electronics, Graduate School of Engineering, Tottori University, 4-101 Koyama-Minami, Tottori 680-8552, Japan. Tottori Integrated Frontier Research Center, 4-101 Koyama-Minami, Tottori 680-8552, Japan.
Satoru Kishida
Affiliation:
Department of Information and Electronics, Graduate School of Engineering, Tottori University, 4-101 Koyama-Minami, Tottori 680-8552, Japan. Tottori Integrated Frontier Research Center, 4-101 Koyama-Minami, Tottori 680-8552, Japan.
Corresponding
Get access

Abstract

It is widely received that resistive switching in electrode (EL)/metal oxide (MO)/EL cell is caused by formation and rupture of a conductive filament (CF) consisting of oxygen vacancies, VO’s. However, driving forces that migrate VO’s are not elucidated yet. Considering an experimental fact that good data endurance more than 106 cycles is often observed, an isotropic driving force that gathers oxygen vacancies and form a CF for set switching is required instead of an electric field drift that is widely received as the driving force of set switching.

In this paper, we reexamined driving forces and succeeded in reproducing pulse response data for wide rise time, t rise, range by simulating VO migration assuming Fick and Soret diffusion, without including the electric-field drift. Therefore, it was suggested that controlling T distribution considering the waveforms of write/erase pulses and the thermodynamic parameters of ELs as well as MO is crucial for the optimization of switching speed of ReRAM.

Type
Articles
Copyright
Copyright © Materials Research Society 2016 

Access options

Get access to the full version of this content by using one of the access options below.

References

Lee, M.-J. et al., Nano Lett. 9, 1476 (2009).CrossRef
Lee, H.-D., Magyari-Köpe, B., and Nishi, Y., Phys. Rev. B 81, 193202 (2010).CrossRef
Yoda, T., Kinoshita, K., Makino, T., Dobashi, K., and Kishida, S., phys. stat. sol. C 8, 546 (2011).CrossRef
Shima, H. et al., phys. stat. sol. (RRL) 2, 99 (2008).CrossRef
Koh, S.-G., Kishida, S., and Kinoshita, K., Appl. Phys. Lett. 104, 083518 (2014).CrossRef
Strukov, D. B., Alibart, F., and Williams, R.-S., Appl. Phys. A 6, 2 (2012).
Chronological scientific tables (Maruzen, 2014).
Nowotny, J. and Sadowski, A., J. Am. Ceram. Soc. 62, 1 (1979).CrossRef
Barin, I., Thermochemical Data of Pure Substances 98-1547 (VCH, 1989).
Furukawa, G. T., Reilly, M. L. and Gallagher, J. S., J. Phys. Chem. Ref. Data 3, 1 (1974).CrossRef
Ishikawa, T., Paradis, P.-F., and Koike, N., Jpn. J. Appl. Phys. 45, 1719 (2006).CrossRef

Send article to Kindle

To send this article to your Kindle, first ensure no-reply@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about sending to your Kindle. Find out more about sending to your Kindle.

Note you can select to send to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

Simulation Study on Reproducing Resistive Switching Effect by Soret and Fick Diffusion in Resistive Random Access Memory
Available formats
×

Send article to Dropbox

To send this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Dropbox.

Simulation Study on Reproducing Resistive Switching Effect by Soret and Fick Diffusion in Resistive Random Access Memory
Available formats
×

Send article to Google Drive

To send this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Google Drive.

Simulation Study on Reproducing Resistive Switching Effect by Soret and Fick Diffusion in Resistive Random Access Memory
Available formats
×
×

Reply to: Submit a response


Your details


Conflicting interests

Do you have any conflicting interests? *