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Room Temperature Ferromagnetism in Gadolinium-doped Gallium Nitride

Published online by Cambridge University Press:  09 January 2018

Vishal G. Saravade
Affiliation:
Missouri University of Science and Technology, Rolla, MO 65409, U.S.A.
Cameron H. Ferguson
Affiliation:
Missouri University of Science and Technology, Rolla, MO 65409, U.S.A.
Amirhossein Ghods
Affiliation:
Missouri University of Science and Technology, Rolla, MO 65409, U.S.A.
Chuanle Zhou
Affiliation:
Missouri University of Science and Technology, Rolla, MO 65409, U.S.A.
Ian T. Ferguson*
Affiliation:
Missouri University of Science and Technology, Rolla, MO 65409, U.S.A.
*
*(Email: ianf@mst.edu)
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Abstract

Anomalous Hall effect was observed at room temperature in MOCVD-grown GaGdN from a (TMHD)3Gd source, which can contain oxygen in its organic ligand. GaN, and GaGdN grown using a Cp3Gd precursor which does not contain oxygen only showed the ordinary Hall effect. This indicates that oxygen could have a role in magnetic properties of GaGdN. The relationship between the anomalous Hall conductivity and longitudinal conductivity indicated that metallic conduction, hopping of carriers, and scattering-independent mechanisms are likely responsible for the ferromagnetism. However, this still requires further clarification.

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Copyright
Copyright © Materials Research Society 2018 

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