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Preparation of NiSi2 and application to thermoelectric silicide elements used as electrodes

Published online by Cambridge University Press:  05 February 2018

Kentaro Yamamoto
Affiliation:
Department of Materials Science and Technology, Tokyo University of Science, 6-3-1 Nijyuku, Katushika-Ku, Tokyo, 125-8585 Japan
Tomoyuki Nakamura
Affiliation:
Department of Materials Science and Technology, Tokyo University of Science, 6-3-1 Nijyuku, Katushika-Ku, Tokyo, 125-8585 Japan SWCC SHOWA CABLE SYSTEMS CO., LTD. 4-1-1 Minami-Hashimoto Chuo-Ku Sagamihara-shi, Kanagawa-ken, 252-0253 Japan
Kenjiro Fujimoto
Affiliation:
Department of Pure and Applied Chemistry, Tokyo University of Science, 2641 Yamazaki, Noda-shi, Chiba, 287-8510 Japan
Ryuji Tamura
Affiliation:
Department of Materials Science and Technology, Tokyo University of Science, 6-3-1 Nijyuku, Katushika-Ku, Tokyo, 125-8585 Japan
Keishi Nishio
Affiliation:
Department of Materials Science and Technology, Tokyo University of Science, 6-3-1 Nijyuku, Katushika-Ku, Tokyo, 125-8585 Japan
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Abstract

We applied NiSi2 as an electrode for thermoelectric modules because NiSi2 has high electric conductivity and is expected to suppress the inter-diffusion of Si from MgSi2 and higher manganese silicide (HMS). The thermal expansion coefficient of NiSi2 is close to that of Mg2Si but differs from that of HMS. Therefore, to reduce thermal stress, we tried to insert a buffer layer consisting of HMS and NiSi2 for the interface between the HMS sintered body and the NiSi2 electrode. The NiSi2 was prepared by using spark plasma sintering (SPS) equipment. NiSi2 electrodes and gradients were formed and connected with the HMS by SPS treatment. Crack-free bonding was achieved by inserting gradients consisting of HMS and NiSi2. The inserted composite buffer layer reduced interface stress and interface resistance between HMS and NiSi2.

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Copyright © Materials Research Society 2018 

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References

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