Published online by Cambridge University Press: 18 January 2016
Recently, metal-halide perovskites have demonstrated an extraordinarily rapid advance in single junction cell efficiency to over 20%, while still offering potentially low costs. Since the bandgap is larger than the ideal single-junction value, perovskite-based tandem cells can theoretically offer even higher efficiencies. Instead, however, the record tandem cell performance in experiments to date has come in slightly below that of record single junctions, although slightly higher than the same single junctions. In this work, we consider both how this disconnect can be explained quantitatively, and then devise experimentally feasible, variance-aware approaches to address them. The first stage of our approach is based on reconfiguring dielectric front coatings to help reduce net reflected power and balance junction currents by reshaping the reflection peaks. This method could be applied to post-fabrication stage of perovskite/c-Si tandem cells, and also applicable to cell and module level structures. In the second stage of our approach, we can almost entirely eliminate Fresnel reflection by applying a conformal periodic light trapping structure. In the best case, a short circuit current (Jsc) of 18.0 mA/cm2 was achieved, after accounting for 4.8 mA/cm2 of parasitic loss and 1.6 mA/cm2 reflection loss. Further improvements may require a change in the baseline materials used in perovskite cells.