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Surface Rippling & Ion Etch Yields of Diamond Using a Focused Ion Beam: With or Without Enhanced-Chemistry, Aspect Ratio Regulates Ion Etching

Published online by Cambridge University Press:  14 March 2018

W. J. MoberlyChan ,
T. E. Felter  and
M. A. Wall
W. J. MoberlyChan*
Affiliation:
Lawrence Livermore National Lab., Livermore, CA
T. E. Felter
Affiliation:
Lawrence Livermore National Lab., Livermore, CA
M. A. Wall
Affiliation:
Lawrence Livermore National Lab., Livermore, CA
*
moberlychan2@llnl.gov

Extract

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The Focused Ion Beam (FIB) instrument, originally designed for semiconductor circuit modification and repair, has found considerable utility as a tool for specimen preparation in several microscopy disciplines and for micromachining small parts. Essentially, a FIB makes very small and precise cuts into a target sample, which implies well-controlled etch rates and close tolerances of surface finish. However, redeposition can affect etch rate and final surface topographies. This work quantifies this redeposition as it modifies yields for different parameters of etching; models the influence of redeposition as applicable to all ion beam processing; and optimizes FIB processing parameters for enhanced yields.

Type
Research Article
Information
Microscopy Today , Volume 14 , Issue 6 , November 2006 , pp. 28 - 35
Copyright
Copyright © Microscopy Society of America 2006

References

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