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Scanning Impedance Microscopy: From Impedance Spectra to Impedance Images

Published online by Cambridge University Press:  14 March 2018

Sergei V. Kalinin  and
Dawn A. Bonnell
Sergei V. Kalinin*
Affiliation:
University of Pennsylvania
*
*sergei2@seas.upenn.edu

Extract

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The properties and performance of electronic devices are crucially dependent on interface-related phenomena. The presence of interfaces can enable electronic device functionality (p-n diodes, solar cells); alternatively, non-functional interfaces can degrade device performance (ohmic vs. non-ohmic contacts). The most versatile tools for semiconductor interface characterization are ac (impedance spectroscopy, C-V) and dc (I-V) transport measurements. However, due to the lack of spatial resolution, these methods often cannot separate the contributions from electroactive interfaces and contacts. This is especially true for the non-traditional electronic materials such as semiconductive oxides, nitrides, conductive polymers, etc. Combined with the tendency towards miniaturization of electronic devices, this clearly necessitates spatially resolved ac and dc transport measurements.

Type
Research Article
Information
Microscopy Today , Volume 10 , Issue 1 , February 2002 , pp. 22 - 27
Copyright
Copyright © Microscopy Society of America 2002

References

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