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Understanding the Growth Mechanism of β-(AlxGa1−x)2O3 by Atom Probe Tomography

Published online by Cambridge University Press:  05 August 2019

Jith Sarker
Affiliation:
Department of Materials Design and Innovation, University at Buffalo-SUNY, Buffalo, NY, USA.
Yuewei Zhang
Affiliation:
Department of Electrical and Computer Engineering, Ohio State University, Columbus, OH, USA.
Menglin Zhu
Affiliation:
Department of Materials Science and Engineering, Ohio State University, Columbus, OH, USA.
Siddharth Rajan
Affiliation:
Department of Electrical and Computer Engineering, Ohio State University, Columbus, OH, USA.
Jinwoo Hwang
Affiliation:
Department of Materials Science and Engineering, Ohio State University, Columbus, OH, USA.
Baishakhi Mazumder*
Affiliation:
Department of Materials Design and Innovation, University at Buffalo-SUNY, Buffalo, NY, USA.
*
*Corresponding author: baishakh@buffalo.edu
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Abstract

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Type
New Frontiers in Atom Probe Tomography Applications
Copyright
Copyright © Microscopy Society of America 2019 

References

[1]Krueger, B.W. et al. , J. Am. Ceram. Soc., 99 (2016), p. 2467.CrossRefGoogle Scholar
[2]Kelly, T. F. and Larson, D. J., Annu. Rev. Matter. Res., 42, (2012), p. 1.CrossRefGoogle Scholar
[3]Luong, T.T. et al. , Microelectronics Reliability 83 (2018), p. 286.CrossRefGoogle Scholar
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