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TEM Analysis of InGaAs/GaAs Quantum Well-Quantum Dot Structures for Optoelectronics Applications

Published online by Cambridge University Press:  25 July 2016

V. Kanzyuba
Affiliation:
Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN, USA
S. Rouvimov
Affiliation:
Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN, USA Notre Dame Integrated Imaging Facility, University of Notre Dame, Notre Dame, IN, USA
S.A. Mintairov
Affiliation:
Ioffe Physical-Technical Institute, St Petersburg, Russia St Petersburg Academic University, St Petersburg, Russia
N.A. Kalyuzhnyy
Affiliation:
Ioffe Physical-Technical Institute, St Petersburg, Russia St Petersburg Academic University, St Petersburg, Russia
M.V. Maximov
Affiliation:
Ioffe Physical-Technical Institute, St Petersburg, Russia St Petersburg Academic University, St Petersburg, Russia
A.M. Nadtochiy
Affiliation:
Ioffe Physical-Technical Institute, St Petersburg, Russia St Petersburg Academic University, St Petersburg, Russia
A.E. Zhukov
Affiliation:
Ioffe Physical-Technical Institute, St Petersburg, Russia St Petersburg Academic University, St Petersburg, Russia
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Abstract

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© Microscopy Society of America 2016 

References

[1] Ustinov, V.M & Zhukov, A.E Semicond. Sci. Technol. 15(8) (2000). p. R41.CrossRefGoogle Scholar
[2] Blokhin, S.A., et al, Applied Physics Letters 87 (2005). p. 191906.Google Scholar
[3] René Kellenbenz, , et al, 35th IEEE Photovoltaic Specialists Conference (PVSC), (2010).Google Scholar
[4] Mintairov, S.A., et al, Nanotechnology 26 (2015). p. 1.CrossRefGoogle Scholar
[5] Mintairov, S. A., et al, Electronics letters 51(20 (2015). p. 1602.CrossRefGoogle Scholar
[6] This work was partially supported by the Russian Foundation for Basic Research under the grant №13-08-12159.Google Scholar
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TEM Analysis of InGaAs/GaAs Quantum Well-Quantum Dot Structures for Optoelectronics Applications
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