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Spatial Distribution of Dislocations in Relation to a Substructure in High-Quality GaN Film

Published online by Cambridge University Press:  06 August 2013

Mino Yang ,
Chong-Don Kim ,
Hee-Goo Kim  and
Cheol-Woong Yang
Mino Yang
Affiliation:
Analytical Engineering Group, Samsung Advanced Institute of Technology (SAIT), Youngin, Gyeonggi-do 446-712, Korea School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do 440-746, Korea
Chong-Don Kim
Affiliation:
Analysis Lab, Samsung Corning Precision Materials, Gumi, Gyeongsangbuk-do 730-717, Korea
Hee-Goo Kim
Affiliation:
Analytical Engineering Group, Samsung Advanced Institute of Technology (SAIT), Youngin, Gyeonggi-do 446-712, Korea
Cheol-Woong Yang*
Affiliation:
School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do 440-746, Korea
*
*Corresponding author. E-mail: cwyang@skku.edu
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Abstract

The dislocation distribution of high-quality single-crystal gallium nitride (GaN) films grown by the hybrid vapor phase epitaxy was analyzed. This study examined the domain structure of GaN from the dislocation distribution on the macroscale by optical microscopy. The surface structure of GaN consisted of domains with microcolumns as the substructure. The inner domains contained a lower density of dislocations but a large number of these dislocations were observed along the domain boundaries. The existence of a domain boundary structure doubly increased the total dislocation density.

Keywords

etch pitdislocationGaNgrain boundaryHVPETEM
Type
Research Article
Information
Microscopy and Microanalysis , Volume 19 , Supplement S5: IUMAS , August 2013 , pp. 127 - 130
Copyright
Copyright © Microscopy Society of America 2013 

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