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Quantitative Strain Measurement in Semiconductor Devices by Scanning Moiré Fringe Imaging

Published online by Cambridge University Press:  27 August 2014

Suhyun Kim ,
Sungho Lee ,
Younheum Jung ,
Joong Jung Kim ,
Gwangseon Byun ,
Sunyoung Lee  and
Heabum Lee
Suhyun Kim
Affiliation:
Memory Analysis Science & Engineering Group, Samsung Electronics, San #16 Hwasung-city, Gyeonggi-Do 445-701, Korea
Sungho Lee
Affiliation:
Memory Analysis Science & Engineering Group, Samsung Electronics, San #16 Hwasung-city, Gyeonggi-Do 445-701, Korea
Younheum Jung
Affiliation:
Memory Analysis Science & Engineering Group, Samsung Electronics, San #16 Hwasung-city, Gyeonggi-Do 445-701, Korea
Joong Jung Kim
Affiliation:
Memory Analysis Science & Engineering Group, Samsung Electronics, San #16 Hwasung-city, Gyeonggi-Do 445-701, Korea
Gwangseon Byun
Affiliation:
Memory Analysis Science & Engineering Group, Samsung Electronics, San #16 Hwasung-city, Gyeonggi-Do 445-701, Korea
Sunyoung Lee
Affiliation:
Memory Analysis Science & Engineering Group, Samsung Electronics, San #16 Hwasung-city, Gyeonggi-Do 445-701, Korea
Heabum Lee
Affiliation:
Memory Yield Enhancement Team, Samsung Electronics, San #16 Hwasung-city, Gyeonggi-Do 445-701, Korea

Abstract

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Type
Abstract
Information
Microscopy and Microanalysis , Volume 20 , Supplement S3: Proceedings of Microscopy & Microanalysis 2014 , August 2014 , pp. 1052 - 1053
Copyright
Copyright © Microscopy Society of America 2014 

References

[1] Su, D., Zhu, Y. Ultramicroscopy 110 (2010), p.229.Google Scholar
[2] Kim, S., et al, Appl. Phys. Lett. 1022013),p.161604.Google Scholar
[3] Kim, S., et al, Appl. Phys. Lett. 103 (2013), p.033523.Google Scholar
[4] Kim, S., et al, J. Appl. Phys. 114 (2013), p. 053518.Google Scholar
[5] Chung, J., et al, Appl. Phys. Lett. 93 (2008), p. 081909.Google Scholar