Hostname: page-component-8448b6f56d-c4f8m Total loading time: 0 Render date: 2024-04-24T13:59:24.529Z Has data issue: false hasContentIssue false

Polarization Screening and Image Formation in SSPM, EFM and PiezoresponseImaging of Ferroelectric BaTiO3 (100) Surface

Published online by Cambridge University Press:  02 July 2020

Sergei V. Kalinin
Affiliation:
Dept. Mat. Sci. Eng., University of Pennsylvania, 3231 Walnut St., Philadelphia, PA19104
Dawn A. Bonnell
Affiliation:
Dept. Mat. Sci. Eng., University of Pennsylvania, 3231 Walnut St., Philadelphia, PA19104
Get access

Extract

Possible applications of ferroelectric materials in non-volatile memories, MEMS, microwave ceramics, PTCR devices and sensors draw significant interest to these materials. Operation of most of these devices relies heavily on the surface (FRAM and other thin-film devices) and interface (PTCR, varistors) properties of ferroeiectrics, particularly on the polarization and charge distribution in the surface or interface region. Electrostatic scanning probe techniques such as electrostatic force microscopy (EFM), scanning surface potential microscopy (SSPM) and piezoresponse imaging (PRI) can be successfully employed for the characterization of ferroelectric surfaces on the micron and submicron level. The former technique is based on the detection of the resonant frequency shift of mechanically driven cantilever, which is proportional to gradient of electrostatic force acting on the tip. The latter two techniques are based on the voltage modulation approach, i.e. during imaging the piezoelectric actuator driving the cantilever is disengaged and the AC bias is applied directly to conductive tip.

Type
Scanned Probe Microscopy
Copyright
Copyright © Microscopy Society of America

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

References:

1.Lines, M.E., Glass, A.M., Principles and Applications of Ferroelectric and Related Materials, (Clarendon Press, Oxford, 1977).Google Scholar
2.Takata, K., Kushida, K., Torii, K., Miki, H., Jpn. J. Appl. Phys. 33, 31933196 (1994).Google Scholar
3.Zavala, G., Fendler, J.H., Trolier-McKinstry, S., J. Appl. Phys., 81, 7480 (1997).CrossRefGoogle Scholar
4.Franke, K., Huelz, H., Weihnacht, M., Surf. Sci. 415, 178182 (1998).CrossRefGoogle Scholar
5.Gruverman, A., Auciello, O., Tokumoto, H., Annu. Rev. Mat. Sci, 28, 101 (1998).CrossRefGoogle Scholar
6.Giannakopoulos, A.E., Suresh, S., Acta mater. 47, 2153 (1999).CrossRefGoogle Scholar
7.Fridkin, V.M., Ferroelectric Semiconductors, (Consultants Bureau, New York, 1980).Google Scholar
8.E.V. Chenskii, , Fiz. Tverd Tela 12, 586 (1970). Cit. by 7.Google Scholar
9.Kalinin, S.V., Bonnell, D.A., Z. fur Met., 90, 983 (1999), also see http://www.seas.upenn.edu/∼bonnellGoogle Scholar