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Interface Characterization of Metallized CVD Diamond

Published online by Cambridge University Press:  02 July 2020

E. S. K. Menon
Affiliation:
Center for Materials Science and Engineering, Department of Mechanical Engineering, Naval Postgraduate School, Monterey, CA93943USA.
M. Saunders
Affiliation:
Center for Materials Science and Engineering, Department of Mechanical Engineering, Naval Postgraduate School, Monterey, CA93943USA.
I. Dutta
Affiliation:
Center for Materials Science and Engineering, Department of Mechanical Engineering, Naval Postgraduate School, Monterey, CA93943USA.
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Extract

Progress towards the large scale integration of active devices within electronics packages has imposed stringent heat dissipation requirements necessitating the development of innovative materials solutions. One possibility being considered is the use of chemically vapor deposited diamond (CVDD) thin films as heat sinks. However, there are technological challenges which must be overcome before these materials become commercially viable. For example, the CVDD substrate must be metallized to provide interconnections between the various devices in the package. Conventional metallizations, such as Au, Cu or Al, display poor adhesion to the diamond causing problems associated with the reliability and stability of metallized diamond packages. A novel solution has been proposed involving the consecutive deposition of a thin layer of Cr and an electrically insulating layer of alumina on the diamond substrate such that the thermal conductivity of the treated substrate is not degraded significantly.

Type
Spatially-Resolved Characterization of Interfaces in Materials
Copyright
Copyright © Microscopy Society of America

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References

1.Menon, E.S.K. and Dutta, I, Appl, Phys. Lett., 68 (1996) 2951.CrossRefGoogle Scholar
2.Saunders, M., Menon, E.S.K., Chisholm, D.J. and Fox, A.G., these proceedings.Google Scholar