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In-situ Transmission Electron Microscopy Study of Oxygen Vacancy Ordering and Dislocation Annihilation in Undoped and Sm-doped CeO2 Ceramics During Redox Processes

Published online by Cambridge University Press:  04 August 2017

Yong Ding
Affiliation:
School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA, United States
Yu Chen
Affiliation:
School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA, United States
Ken C. Pradel
Affiliation:
School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA, United States
Meilin Liu
Affiliation:
School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA, United States
Zhong Lin Wang
Affiliation:
School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA, United States
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Abstract

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© Microscopy Society of America 2017 

References

[1] Ding, Y, et al, Journal of Applied Physics 120 2016). p. 214302.CrossRefGoogle Scholar
[2] Kummerle, E A & Heger, G Journal of Solid State Chemistry 147 1999). p. 485.CrossRefGoogle Scholar
[3] The authors acknowledge the support from the Hightower chair foundation, the National Science Foundation (DMR-1505319), and the US Department of Energy ARPA-E REBELS Program (DE- AR0000502).Google Scholar
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In-situ Transmission Electron Microscopy Study of Oxygen Vacancy Ordering and Dislocation Annihilation in Undoped and Sm-doped CeO2 Ceramics During Redox Processes
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In-situ Transmission Electron Microscopy Study of Oxygen Vacancy Ordering and Dislocation Annihilation in Undoped and Sm-doped CeO2 Ceramics During Redox Processes
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In-situ Transmission Electron Microscopy Study of Oxygen Vacancy Ordering and Dislocation Annihilation in Undoped and Sm-doped CeO2 Ceramics During Redox Processes
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