Hostname: page-component-848d4c4894-wzw2p Total loading time: 0 Render date: 2024-05-09T13:50:55.480Z Has data issue: false hasContentIssue false
  • English
  • Français

Focused Ion Beam Interfaced with a 200 keV Transmission Electron Microscope for In Situ Micropatterning on Semiconductors

Published online by Cambridge University Press:  28 July 2005

Miyoko Tanaka ,
Kazuo Furuya  and
Tetsuya Saito
Miyoko Tanaka
Affiliation:
High Resolution Beam Research Station, National Research Institute for Metals, 1-2-1 Sengen, Tsukuba, Ibaraki 305, Japan
Kazuo Furuya
Affiliation:
High Resolution Beam Research Station, National Research Institute for Metals, 1-2-1 Sengen, Tsukuba, Ibaraki 305, Japan
Tetsuya Saito
Affiliation:
High Resolution Beam Research Station, National Research Institute for Metals, 1-2-1 Sengen, Tsukuba, Ibaraki 305, Japan
Get access

Abstract

A focused ion beam (FIB) interface attached to a column of 200 keV transmission electron microscope (TEM) was developed for in situ micropatterning to semiconductors. TEM specimens of Si and GaAs, and those of a thin Ni2Si layer on a Si substrate were micromilled in the TEM during observation. A set of 6 x 6-um squares and alphabet letters were patterned with a 25 keV Ga+-FIB of 0.2-μm beam diameter at room temperature. The effect of FIB irradiation on the structural evolution was observed simultaneously by a TV-rate video camera and sequentially by regular film. FIB micropatterning to semiconductor specimens caused amorphization and Ga injection. The excess Ga in the specimens precipitated as metastable solid γ-phase for Si and as liquid phase for GaAs. Ni2Si/Si specimens lost silicide crystallinity after FIB patterning. Annealing of these bilayer specimens at 673K resulted in the precipitation of Ni-rich silicide.

Keywords

transmission electron microscopyfocused ion beamin situ observationmicropatterningbeam broadeningSiGaAsNi silicideradiation-induced precipitates
Type
1998 ASU ELECTRON MICROSCOPY WORKSHOP
Information
Microscopy and Microanalysis , Volume 4 , Issue 3 , June 1998 , pp. 207 - 217
Copyright
© 2005 Microscopy Society of America

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)