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Extended Electron Loss Fine Structure Analysis of Silicon-K Edges Using an Imaging Filter
Published online by Cambridge University Press: 02 July 2020
Extract
The recent availability of Gatan's imaging filter (GIF) has improved detail in electron energy loss spectroscopy (EELS) owing to the greatly reduced channel-to-channel gain variation. In particular, extended electron loss fine structure (EXELFS) can be rapidly obtained with relatively low beam exposures to the sample. Previous studies using EXELFS (of which there are relatively few) have been limited to rather beam-insensitive samples and have required extensive effort to correct detector gain variation. [1,2] We will discuss here some of our ongoing work on use of EXELFS as a complement to other analytical microscopy techniques to study changes in materials caused by radiation damage (ion and alpha) and transmutation. Using an imaging filter as a spectrometer, we have obtained EXELFS from a rather beam-sensitive alkali aluminosilicate, pollucite (CsAlSi2O6).
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- Nanophase and Amorphous Materials
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- Copyright © Microscopy Society of America