Hostname: page-component-7c8c6479df-p566r Total loading time: 0 Render date: 2024-03-29T09:15:53.694Z Has data issue: false hasContentIssue false

Electron Tomography Study on Nanoscale HfOx/AlOy-based Resistive Switching Device

Published online by Cambridge University Press:  04 August 2017

Jiaming Zhang
Affiliation:
Hewlett Packard Enterprise Labs, 1501 Page Mill Rd, Palo Alto, CA
Peter Ercius
Affiliation:
National Center for Electron Microscopy, Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA
Peng Zhang
Affiliation:
Nanolab Technologies Inc., Milpitas, CA
Jie Luo
Affiliation:
Nanolab Technologies Inc., Milpitas, CA
Kyungmin Kim
Affiliation:
Hewlett Packard Enterprise Labs, 1501 Page Mill Rd, Palo Alto, CA
Max Zhang
Affiliation:
Hewlett Packard Enterprise Labs, 1501 Page Mill Rd, Palo Alto, CA
R. Stanley Williams
Affiliation:
Hewlett Packard Enterprise Labs, 1501 Page Mill Rd, Palo Alto, CA

Abstract

Image of the first page of this content. For PDF version, please use the ‘Save PDF’ preceeding this image.'
Type
Abstract
Copyright
© Microscopy Society of America 2017 

References

[1] Yang, J. J., Strukov, D. B. & Stewart, D. R. Nat Nano 8(1 2013). p 1324.CrossRefGoogle Scholar
[2] Midgley, P. A. & Dunin-Borkowski, R. E. Nat Mater 8(4 2009). p 271.CrossRefGoogle Scholar
[3] Hovden, R., et al, Ultramicroscopy 140 2014). p 26.CrossRefGoogle Scholar
[4] Zhang, J. M., Norris, K. J. & Gibson, G. Scientific Reports 6 2016). p 34294.Google Scholar