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Elastic Properties of GaN Nanowires: Revealing the influence of planar defects on Young's modulus at nanoscale

Published online by Cambridge University Press:  23 September 2015

Sheng Dai
Affiliation:
Beijing National Center for Electron Microscopy, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109, USA.
Jiong Zhao
Affiliation:
Beijing National Center for Electron Microscopy, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
Xiaoguang Wang
Affiliation:
Center for Advancing Materials Performance from the Nanoscale (CAMP-Nano) & Hysitron Applied Research Center in China (HARCC), Xi'an Jiaotong University, Xi'an, 710049, China.
Zhiwei Shan
Affiliation:
Center for Advancing Materials Performance from the Nanoscale (CAMP-Nano) & Hysitron Applied Research Center in China (HARCC), Xi'an Jiaotong University, Xi'an, 710049, China.
Jing Zhu
Affiliation:
Beijing National Center for Electron Microscopy, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
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Abstract

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Copyright © Microscopy Society of America 2015 

References

[1] Dai, S, Zhao, J, He, M, et al., Nano Letters 15 (2015) 8.CrossRefGoogle Scholar
[2] Dai, S, Zhao, J, He, M, et al., J. Phys. Chem. C 117 (2013) 12895.CrossRefGoogle Scholar
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