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Direct Imaging of Trace Elements, Isotopes, and Molecules Using Mass Spectrometry

Published online by Cambridge University Press:  02 July 2020

Richard W. Linton
Richard W. Linton*
Affiliation:
Department of Chemistry - CB3290, The University of North Carolina, Chapel Hill, NC, 27599-3290
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Extract

Secondary ion mass spectrometry (SIMS) is based upon the energetic ion bombardment of surfaces resulting in in the emission of sputtered particles, including both atomic and molecular ions. The use of mass spectrometric detection provides a highly versatile and sensitive tool for surface and thin film microanalysis. The scope of the technique includes a diversity of analysis modes including:

  1. 1. Elemental Depth Profiling (dynamic SIMS),

  2. 2. Laterally Resolved Imaging (ion microprobe or ion microscope analysis),

  3. 3. Image Depth Profiling (combination of modes 1 and 2 providing 3-D images),

  4. 4. Molecular Monolayer Analysis and Imaging (static SIMS),

  5. 5. Sputtered Neutral Mass Spectrometry (post-ionization).

Much of the early work in dynamic SIMS centered on depth profiling and imaging techniques, with an emphasis on applications to electronic materials. SIMS has made extensive contributions to semiconductor materials science since the 1960's, including the development of new devices and processes, and in failure analysis.

Type
Compositional Mapping With High Spatial Resolution
Information
Microscopy and Microanalysis , Volume 4 , Issue S2: Proceedings: Microscopy & Microanalysis '98, Microscopy Society of America 56th Annual Meeting, Microbeam Analysis Society 32nd Annual Meeting, Atlanta, Georgia July 12-16, 1998 , July 1998 , pp. 124 - 125
Copyright
Copyright © Microscopy Society of America

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References

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