Hostname: page-component-8448b6f56d-xtgtn Total loading time: 0 Render date: 2024-04-16T12:23:19.240Z Has data issue: false hasContentIssue false

Detailed In Situ Observations of Electromigration in Aluminum Wires

Published online by Cambridge University Press:  04 August 2017

Matthew Mecklenburg
Affiliation:
Center for Electron Microscopy and Microanalysis, University of Southern California, Los Angeles, CA, USA
Brian Zutter
Affiliation:
Department of Physics and Astronomy & California NanoSystems Institute, University of California, Los Angeles, CA, USA
William A. Hubbard
Affiliation:
Department of Physics and Astronomy & California NanoSystems Institute, University of California, Los Angeles, CA, USA
Shaul Aloni
Affiliation:
Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
B. C. Regan
Affiliation:
Department of Physics and Astronomy & California NanoSystems Institute, University of California, Los Angeles, CA, USA

Abstract

Image of the first page of this content. For PDF version, please use the ‘Save PDF’ preceeding this image.'
Type
Abstract
Copyright
© Microscopy Society of America 2017 

References

[1] Pierce, DG & Brusius, PG Microelectronics Reliability 37 1997). p. 10531072.Google Scholar
[2] Tu, KN Journal of Applied Physics 94 2003). p. 5451.Google Scholar
[3] Regan, BC, et al, Nature 428 2004). p. 924927.Google Scholar
[4] Mecklenburg, M, et al, Science 347 2015). p. 629632.CrossRefGoogle Scholar
[5] This work was supported by FAME, one of six centers of STARnet, a Semiconductor Research Corporation program sponsored by MARCO and DARPA, by National Science Foundation (NSF) award DMR-1611036, and by NSF STC award DMR-1548924. Data presented were acquired at the Center for Electron Microscopy and Microanalysis at the University of Southern California. D. R. G. Mitchell’s “Apply CLUT” script was used to make the intensity scale bar in Figure 1.Google Scholar