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Characterizing InGaAs/GaAs quantum dots using low-kV FESEM imaging and EDS analysis at the nanometer scale

Published online by Cambridge University Press:  25 July 2016

Fang Zhou ,
Luyang Han ,
Simon Burgess  and
Xiaobing Li
Fang Zhou
Affiliation:
Carl Zeiss Microscopy GmbH, Carl-Zeiss-StraBe 22, 73447 Oberkochen, Germany
Luyang Han
Affiliation:
Carl Zeiss Microscopy GmbH, Carl-Zeiss-StraBe 22, 73447 Oberkochen, Germany
Simon Burgess
Affiliation:
Oxford Instruments NanoAnalysis, Halifax Road, High Wycombe, Bucks HP12 3SE, UK
Xiaobing Li
Affiliation:
Oxford Instruments NanoAnalysis, Halifax Road, High Wycombe, Bucks HP12 3SE, UK

Abstract

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Type
Abstract
Information
Microscopy and Microanalysis , Volume 22 , Supplement S3: Proceedings of Microscopy & Microanalysis 2016 , July 2016 , pp. 1586 - 1587
Copyright
© Microscopy Society of America 2016 

References

References:

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