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Characterization of optical properties of the dislocations in GaN films using transmission electron microscopy cathodoluminescence

Published online by Cambridge University Press:  23 November 2012

S. Kim ,
J. Lee ,
B. Koo ,
Y. Kim ,
J. Choi  and
S. Kwon
S. Kim
Affiliation:
Department of Materials Science and Engineering, Seoul National University, Seoul, Republic of Korea
J. Lee
Affiliation:
Department of Materials Science and Engineering, Seoul National University, Seoul, Republic of Korea
B. Koo
Affiliation:
Department of Materials Science and Engineering, Seoul National University, Seoul, Republic of Korea
Y. Kim
Affiliation:
Department of Materials Science and Engineering, Seoul National University, Seoul, Republic of Korea
J. Choi
Affiliation:
Ulsan National Institute of Science and Technology, Ulsan, Republic of Korea
S. Kwon
Affiliation:
Ulsan National Institute of Science and Technology, Ulsan, Republic of Korea
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Abstract

Extended abstract of a paper presented at Microscopy and Microanalysis 2012 in Phoenix, Arizona, USA, July 29 – August 2, 2012.

Type
Research Article
Information
Microscopy and Microanalysis , Volume 18 , Issue S2: Proceedings of Microscopy & Microanalysis 2012 , July 2012 , pp. 1840 - 1841
Copyright
Copyright © Microscopy Society of America 2012

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