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Characterization of Etched and Grown GaN-GaN Schottky Diodes

Published online by Cambridge University Press:  05 August 2019

Prudhvi Peri ,
Kai Fu ,
Yuji Zhao  and
David J. Smith
Prudhvi Peri*
Affiliation:
School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, AZ 85287, USA
Kai Fu
Affiliation:
School of Electrical, Energy and Computer Engineering, Arizona State University, Tempe, AZ Electrical
Yuji Zhao
Affiliation:
School of Electrical, Energy and Computer Engineering, Arizona State University, Tempe, AZ Electrical
David J. Smith
Affiliation:
Department of Physics, Arizona State University, Tempe, AZ
*
*Contact: pperi1@asu.edu

Abstract

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Type
Microscopy and Spectroscopy of Nanoscale Materials for Energy Applications
Information
Microscopy and Microanalysis , Volume 25 , Supplement S2 , August 2019 , pp. 2240 - 2241
Copyright
Copyright © Microscopy Society of America 2019 

References

[1]Fujito, K. et al. , J. Cryst. Growth. 311 (2009), p. 3011-3014.Google Scholar
[2]Zhang, Y., Dadgar, A., Palacios, T., J. Phys. D. Appl. Phys. 51 (2018), p. 27.Google Scholar
[3]This work was supported by ARPA-E award DE-AR0000868. The authors acknowledge the use of facilities within the John M. Cowley Center for High Resolution Electron Microscopy at Arizona State University.Google Scholar