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Analysis of GaAs Compound Semiconductors and the Semiconductor Laser Diode using Off-Axis Electron Holography, Lorentz Microscopy, Electron Diffraction Microscopy and Differential Phase Contrast STEM

Published online by Cambridge University Press:  23 September 2015

Hirokazu Sasaki
Affiliation:
Furukawa Electric Ltd., Yokohama and Japan.
Shinya Otomo
Affiliation:
Furukawa Electric Ltd., Yokohama and Japan.
Ryuichiro Minato
Affiliation:
Furukawa Electric Ltd., Yokohama and Japan.
Kazuo Yamamoto
Affiliation:
Nanostructure Research Laboratory, Japan Fine Ceramics Center, Nagoya and Japan.
Tsukasa Hirayama
Affiliation:
Nanostructure Research Laboratory, Japan Fine Ceramics Center, Nagoya and Japan.
Jun Yamasaki
Affiliation:
Osaka University, Osaka and Japan.
Naoya Shibata
Affiliation:
Institute of Engineering Innovation, The University of Tokyo, Tokyo and Japan.
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Abstract

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Copyright © Microscopy Society of America 2015 

References

[1] Sasaki, H, et al, Microscopy 63 (2014) 235.CrossRefGoogle ScholarPubMed
[2] Yamasaki, J, et al, Appl. Phys. Lett. 101 (2012) 234105.CrossRefGoogle Scholar
[3] Dekkers, N. H. & de Lang, H., Optik 41, 452 (1974).Google Scholar
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Analysis of GaAs Compound Semiconductors and the Semiconductor Laser Diode using Off-Axis Electron Holography, Lorentz Microscopy, Electron Diffraction Microscopy and Differential Phase Contrast STEM
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Analysis of GaAs Compound Semiconductors and the Semiconductor Laser Diode using Off-Axis Electron Holography, Lorentz Microscopy, Electron Diffraction Microscopy and Differential Phase Contrast STEM
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Analysis of GaAs Compound Semiconductors and the Semiconductor Laser Diode using Off-Axis Electron Holography, Lorentz Microscopy, Electron Diffraction Microscopy and Differential Phase Contrast STEM
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