Hostname: page-component-7c8c6479df-xxrs7 Total loading time: 0 Render date: 2024-03-29T14:20:13.081Z Has data issue: false hasContentIssue false

Advanced Characterization of Emerging Semiconductor Devices Using Low Energy, Broad Ion Beam Argon Milling

Published online by Cambridge University Press:  04 August 2017

P. Nowakowski
Affiliation:
E.A. Fischione Instruments, Inc., 9003 Corporate Circle, Export, PA, USA
J. Sagar
Affiliation:
Oxford Instruments NanoAnalysis, Halifax Road, High Wycombe, Bucks, UK
M.L. Ray
Affiliation:
E.A. Fischione Instruments, Inc., 9003 Corporate Circle, Export, PA, USA
P.E. Fischione
Affiliation:
E.A. Fischione Instruments, Inc., 9003 Corporate Circle, Export, PA, USA

Abstract

Image of the first page of this content. For PDF version, please use the ‘Save PDF’ preceeding this image.'
Type
Abstract
Copyright
© Microscopy Society of America 2017 

References

[1] Wang, DD, et al, AIP Adv. 5 2015 127101.Google Scholar
[2] Bonora, AC Solid State Technol 20 1977). p. 55.Google Scholar
[3] Yap, HH, et al, Microelectron. Reliab. 55 2015). p. 1611.Google Scholar
[4] Obona, JV, et al, Microsc. Microanal. 22 2016). p. 56.CrossRefGoogle Scholar
Alvis, R et al, Conf. Proc. Int. Symp. Test. Failure Anal. (2015) p. 393.Google Scholar
[6] Nowakowski, P In press.Google Scholar