Skip to main content Accessibility help
×
Home
Hostname: page-component-544b6db54f-5rlvm Total loading time: 0.227 Render date: 2021-10-20T01:59:14.818Z Has data issue: true Feature Flags: { "shouldUseShareProductTool": true, "shouldUseHypothesis": true, "isUnsiloEnabled": true, "metricsAbstractViews": false, "figures": true, "newCiteModal": false, "newCitedByModal": true, "newEcommerce": true, "newUsageEvents": true }

Structure and Chemistry across Interfaces at Nanoscale of a Ge Quantum Well Embedded within Rare Earth Oxide Layers

Published online by Cambridge University Press:  24 June 2011

Tanmay Das
Affiliation:
Department of Condensed Matter Physics and Materials Science, Tata Institute of Fundamental Research, Mumbai 400005, India
Somnath Bhattacharyya*
Affiliation:
Department of Condensed Matter Physics and Materials Science, Tata Institute of Fundamental Research, Mumbai 400005, India
*
Corresponding author. E-mail: somnath_tem@yahoo.com

Abstract

Structure and chemistry across the rare earth oxide-Ge interfaces of a Gd2O3-Ge-Gd2O3 heterostructure grown on p-Si (111) substrate using encapsulated solid phase epitaxy method have been studied at nanoscale using various transmission electron microscopy methods. The structure across both the interfaces was investigated using reconstructed phase and amplitude at exit plane. Chemistry across the interfaces was explored using elemental mapping, high-angle annular dark-field imaging, electron energy loss spectroscopy, and energy dispersive X-ray spectrometry. Results demonstrate the structural and chemical abruptness of both the interfaces, which is most essential to maintain the desired quantum barrier structure.

Type
Materials Applications
Copyright
Copyright © Microscopy Society of America 2011

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

Bhattacharyya, S., Koch, C.T. & Ruhle, M. (2006). Projected potential profiles across interfaces obtained by reconstructing the exit face wave function from through focal series. Ultramicroscopy 106(6), 525538.CrossRefGoogle ScholarPubMed
Bojarczuk, N.A., Copel, M., Guha, S., Narayanan, V., Preisler, E.J., Ross, F.M. & Shang, H. (2003). Epitaxial silicon and germanium on buried insulator heterostructures and devices. Appl Phys Lett 83, 54435445.CrossRefGoogle Scholar
Crozier, P.A. (1995). Quantitative elemental mapping of materials by energy-filtered imaging. Ultramicroscopy 58(2), 157174.CrossRefGoogle Scholar
Egerton, R.F. (1996). Electron Energy-Loss Spectroscopy in the Electron Microscope, 2nd Ed., pp. 304305. New York, London: Plenum Press.CrossRefGoogle Scholar
Fissel, A., Elassar, Z. & Kirfel, O. (2006). Interface formation during molecular beam epitaxial growth of neodymium oxide on silicon. J Appl Phys 99, 074105.CrossRefGoogle Scholar
Gerchberg, R.W. & Saxton, W.O. (1972). A practical algorithm for the determination of phase from image and diffraction plane pictures. Optik 35, 237246.Google Scholar
Giussani, A., Rodenbach, P., Zaumseil, P., Dabrowski, J., Krups, R., Weidner, G., Müssig, H.J., Storck, P., Wollschläger, J. & Achroeder, T. (2009). Atomically smooth and single crystalline Ge(111)/cubic-Pr2O3(111)/Si(111) heterostructures: Structural and chemical composition study. J Appl Phys 105, 033512.Google Scholar
Hong, M., Kwo, J., Kortan, A.R., Mannaerts, J.P. & Sergent, A.M. (1999). Epitaxial cubic gadolinium oxide as a dielectric for gallium arsenide passivation. Science 283, 18971900.CrossRefGoogle ScholarPubMed
Jäger, W. & Mayer, J. (1995). Energy-filtered transmission electron microscopy of SimGen superlattices and Si-Ge heterostructures I. Experimental results. Ultramicroscopy 59, 3345.CrossRefGoogle Scholar
Jolly, W.L. & Latimer, W.M. (1952). The equilibrium Ge(s) + GeO,(s) = 2GeO(g). The heat of formation of germanic oxide. J Am Chem Soc 74, 57575758.CrossRefGoogle Scholar
Krishnamohan, T., Krivokapic, Z., Uchida, K., Nishi, Y. & Saraswat Krishna, C. (2006). High-mobility ultrathin strained Ge MOSFETs on bulk and SOI with low band-to-band tunneling leakage: Experiments. IEEE Trans Electron Device 53, 990998.CrossRefGoogle Scholar
Krivanek, O.L., Kundmann, M.K. & Kimoto, K. (1995). Spatial resolution in EFTEM elemental maps. J Microsc 180, 277287.CrossRefGoogle Scholar
Laha, A., Bugiel, E., Jestremski, M., Ranjith, R., Fissel, A. & Osten, J.H. (2009). Encapsulated solid phase epitaxy of a Ge quantum well embedded in an epitaxial rare earth oxide. Nanotechnol 20, 475604.CrossRefGoogle Scholar
Molle, A., Perego, M., Bhuiyan, M.N.K.J., Wiemer, C., Tallarida, G. & Fanciulli, M. (2007). The interface between Gd2O3 films and Ge (001): A comparative study between molecular and atomic oxygen mediated growths. J Appl Phys 102, 034513.CrossRefGoogle Scholar
Nakaharai, S., Tezuka, T., Hirashita, N., Toyoda, E., Moriyama, Y., Sugiyama, N. & Takagi, S. (2009). Formation process of high-purity Ge-on-insulator layers by Ge-condensation technique. J Appl Phys 105, 024515.CrossRefGoogle Scholar
Pötz, W. & Li, Z.Q. (1989). Imperfection and resonant tunneling in quantum-well heterostructures. Solid State Electron 32, 13531357.CrossRefGoogle Scholar
Prabhakaran, K., Maeda, F., Watanabe, Y. & Ogino, T. (2000). Distinctly different thermal decomposition pathways of ultra thin oxide layer on Ge and Si surfaces. Appl Phys Lett 76, 22442246.CrossRefGoogle Scholar
Toriumi, A., Tabata, T., Lee, C.H., Nishimura, T., Kita, K. & Nagashio, K. (2009). Opportunities and challenges for Ge CMOS—Control of interfacing field on Ge is a key. Microelectron Eng 86, 15711576.CrossRefGoogle Scholar
Tsoutsou, D., Apostolopoulos, G., Galata, S.F., Tsipas, P., Sotiropoulos, A., Mavrou, G., Panayiotatos, Y., Dimoulas, A., Lagoyannis, A., Karydas, A.G., Kantarelou, V. & Harissopoulos, S. (2009). Stabilization of very high-k tetragonal phase in Ge-doped ZrO2 films grown by atomic oxygen beam deposition. J Appl Phys 106, 024107.CrossRefGoogle Scholar
Wilk, G.D., Wallace, R.M. & Anthony, J.M. (2001). High-k gate dielectrics: Current status and materials properties considerations. J Appl Phys 89, 52435275.CrossRefGoogle Scholar
Williams, D. & Carter, C.B. (2009). Transmission Electron Microscopy Part 1, 2nd Ed., pp. 8384. New York: Springer.CrossRefGoogle Scholar
Xia, G., Wang, S., Zhou, S. & Xu, J. (2010). Selective phase synthesis of a high luminescence GdwO3: Eu nanocrystal phosphor through direct solution combustion. Nanotechnol 21, 345601.CrossRefGoogle ScholarPubMed
5
Cited by

Send article to Kindle

To send this article to your Kindle, first ensure no-reply@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about sending to your Kindle. Find out more about sending to your Kindle.

Note you can select to send to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

Structure and Chemistry across Interfaces at Nanoscale of a Ge Quantum Well Embedded within Rare Earth Oxide Layers
Available formats
×

Send article to Dropbox

To send this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Dropbox.

Structure and Chemistry across Interfaces at Nanoscale of a Ge Quantum Well Embedded within Rare Earth Oxide Layers
Available formats
×

Send article to Google Drive

To send this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Google Drive.

Structure and Chemistry across Interfaces at Nanoscale of a Ge Quantum Well Embedded within Rare Earth Oxide Layers
Available formats
×
×

Reply to: Submit a response

Please enter your response.

Your details

Please enter a valid email address.

Conflicting interests

Do you have any conflicting interests? *