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Scanning Photoemission Spectromicroscopic Study of 4-nm Ultrathin SiO3.4 Protrusions Probe-Induced on the Native SiO2 Layer

Published online by Cambridge University Press:  11 October 2011

Rupesh S. Devan
Department of Physics, National Dong Hwa University, Hualien 97401, Taiwan, Republic of China
Shun-Yu Gao
Department of Physics, National Dong Hwa University, Hualien 97401, Taiwan, Republic of China
Yu-Rong Lin
Department of Physics, National Dong Hwa University, Hualien 97401, Taiwan, Republic of China
Shun-Rong Cheng
Department of Physics, National Dong Hwa University, Hualien 97401, Taiwan, Republic of China
Chia-Er Hsu
Department of Physics, National Dong Hwa University, Hualien 97401, Taiwan, Republic of China
Chia-Hao Chen
National Synchrotron Radiation Research Center, Hsinchu 300, Taiwan, Republic of China
Hung-Wei Shiu
National Synchrotron Radiation Research Center, Hsinchu 300, Taiwan, Republic of China
Yung Liou
Institute of Physics, Academia Sinica, Taipei 11529, Taiwan, Republic of China
Yuan-Ron Ma*
Department of Physics, National Dong Hwa University, Hualien 97401, Taiwan, Republic of China
Corresponding author. E-mail:
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Atomic force microscopy probe-induced large-area ultrathin SiOx (x ≡ O/Si content ratio and x > 2) protrusions only a few nanometers high on a SiO2 layer were characterized by scanning photoemission microscopy (SPEM) and X-ray photoemission spectroscopy (XPS). SPEM images of the large-area ultrathin SiOx protrusions directly showed the surface chemical distribution and chemical state specifications. The peak intensity ratios of the XPS spectra of the large-area ultrathin SiOx protrusions provided the elemental quantification of the Si 2p core levels and Si oxidation states (such as the Si4+, Si3+, Si2+, and Si1+ species). The O/Si content ratio (x) was evidently determined by the height of the large-area ultrathin SiOx protrusions.

Materials Applications
Copyright © Microscopy Society of America 2011

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